A Transparent PN Junction Based on Tin-antimony Oxide Films
Source abstract
Abstract
Transparent and semiconductive tin-antimony oxide(TAO) films were fabricated by reactive DC magnetron sputtering.According to the results of Hall effect measurement,TAO films are p-type for Sn/Sb atomic ratio in the range of 0.22-0.33,while TAO films with Sn/Sb atomic ratio out of this range are n-type.Optical band-gap measurement results show that the band-gap of all TAO films with various Sn/Sb ratios is almost identical(~3.91eV).Finally,a PN junction based on n-TAO and p-TAO was fabricated using ITO as the electrode for n-TAO and a thin layer of Cu as the electrode for p-TCO.It shows typical rectifying characteristics of a homo-junction diode since both types of TAO films have almost the same band-gap values.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Transition Metal Oxide Nanomaterials
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