Influence of Sputtering Process on the Deposition and Optical Properties of SiCN Films

SiCN films were prepared by RF magnetron sputtering with SiC target. The influences of the basic process parameters, such as the deposition power and partial pressure of nitrogen, on the deposition rate and optical properties were studied. XPS and FTIR results revealed the formation of a complex network among Si, C and N. The deposition rate decreased with increasing partial pressure of nitrogen. The increase of N flux resulted in wider optical gap. The higher the deposition power, the higher the deposition rate and the narrower the optical band gap.