Characterization and Properties of Si_3N_(4p)/Si_3N_4 Radome Material Prepared by Chemical Vapor Infiltration
Source abstract
Abstract
Si3N4p/Si3N4 radome material was prepared by chemical vapor infiltration (CVI) with SiCU- NH3-H2 systems. XRF analysis shows the specimen mainly contains Si, N, O three kinds of elements. XRD patterns indicate the sample consists ofα-Si3N4, amorphous deposit, noncrystalline SiO2, small amount ofβ-Si3N4 and Si. Amorphous deposit can be converted intoα-Si3N4 andβ-Si3N4 by high temperature heat treatment. SEM photographs show weak bonding and large pores exist among granulae. Maximum flexural strength of the samples is 94MPa, and dielectric constants are between 4.1 and 4.8.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Silicone and Siloxane Chemistry · Advanced Surface Polishing Techniques
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