Crystallization of Amorphous SiCN Ceramic Annealed in Vacuum
Source abstract
Abstract
以六甲基二硅氮烷为单一前驱体，采用电热裂解化学气相沉积技术制备了SiCN陶瓷.借助X射线衍射仪、透射电子显微镜研究了真空环境中非晶SiCN陶瓷在1300～1900℃范围内的晶化行为，并根据研究结果，运用分解-结晶机理解释了其晶化过程.非晶SiCN陶瓷在低于1300℃开始发生分解，形成富Si-C区域，并最终发生β-SiC结晶.其结晶度随热处理温度的升高而愈加明显.在1700℃处理时发生β-SiC→α-SiC相变.分解形成的N-难以与Si-结合形成富Si-N区域，最终以N2形式溢出，在整个热处理温度范围没有出现氮气下热处理时存在的Si3N4结晶.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Advanced materials and composites · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (12)
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