Thermal Behaviors of Chemical Vapor Deposited Bulk Si-C-N Ceramic
Source abstract
Abstract
采用化学气相沉积法制备了块体非晶态Si-C-N陶瓷. 用TG/DSC、XRD、SEM和TEM等技术方法研究了所制备的Si-C-N陶瓷的热行为. 研究结果表明: 在热处理过程中, 非晶态Si-C-N首先发生相分离, 分离后的一种相呈颗粒状; β-SiC就是从这种颗粒状的分离相中形成. 在热处理条件下, 非晶Si-C-N的晶化温度约为1200℃; 在加热速率为20℃/min的连续加热条件下, 其晶化温度为1372.6℃. β-SiC在1200℃首先形成, β-Si 3 N 4 和α-SiC则在1500℃形成. 在扫描电镜观察中, 热处理后的Si-C-N中出现一种类似于层状的组织, 这种组织的晶化程度较高.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Advanced materials and composites · Diamond and Carbon-based Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (22)
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