Atomic Scale Simulation of {111}-Oriented SiC Film Growth by Chemical Vapor Deposition Method
Source abstract
Abstract
在化学气相沉积SiC膜过程中,分别考虑了化学反应的动力学以及基底表面原子的沉积与扩散,利用动力学蒙特卡罗方法,建立了SiC膜{111}取向的三维原子尺度模型,使用MATLAB模拟了原子尺度的SiC膜{111}取向生长过程.模拟结果表明：膜的生长经历了小岛的生成、小岛的合片与扩展、小岛间达到动态平衡三个阶段.随着温度的升高,膜的生长速率、表面粗糙度以及膜的厚度都增大.随着生长速率的增大,表面粗糙度增大,相对密度减小.模拟结果与理论和实验具有较好的吻合性.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Advanced Data Storage Technologies · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References
Reference metadata was not supplied for this record.