Photoluminescence and Characterization of ZnO/Zn2SnO4 Nanocables
Source abstract
Abstract
ZnO、Zn 2 SnO 4 均为直接带隙宽禁带氧化物半导体, 是优异的功能材料. 以ZnO、SnO 2 为原料, 通过共热蒸发法, 合成了ZnO/Zn 2 SnO 4 纳米电缆结构. 该纳米电缆结构为以ZnO为芯, Zn 2 SnO 4 为鞘, 直径为50~100nm, 长度可达上百微米. 通过TEM分析手段, 发现该纳米电缆结构中, ZnO的生长方向为 方向, ZnO芯与Zn 2 SnO 4 鞘之间形成晶格外延关系. 室温下光致发光谱结果显示, 该纳米电缆结构在紫外区域(380.58nm附近处)存在很强的带边发光, 而在可见光区域没有明显的发光带, 这一结果表明: Zn 2 SnO 4 鞘层的存在能有效抑制ZnO表面的缺陷发光. ZnO/Zn 2 SnO 4 纳米电缆结构可以抑制电子?空穴的复合, 在染料敏化太阳能电池等方面有一定的应用潜力.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Nanowire Synthesis and Applications · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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