Oxide Neuron Devices and Their Applications in Artificial Neural Networks
Source abstract
Abstract
Nowadays, artificial intelligence (AI) is playing an increasingly important role in human society.Running AI algorithms represented by deep learning places great demands on computational power of hardware.However, with Moore's Law approaching physical limitations, the traditional Von Neumann computing architecture cannot meet the urgent demand for promoting hardware computational power.The brain-inspired neuromorphic computing (NC)employing an integrated processing-memory architecture is expected to provide an important hardware basis for developing novel AI technologies with low energy consumption and high computational power.Under this conception, artificial neurons and synapses, as the core components of NC systems, have become a research hotspot.This paper aims to provide a comprehensive review on the development of oxide neuron devices.Firstly, several mathematical models of neurons are described.Then, recent progress of Hodgkin-Huxley neurons, leaky integrate-and-fire neurons and oscillatory neurons based on oxide electronic devices is introduced in detail.The effects of device structures and working mechanisms on neuronal performance are systematically analyzed.Next, the hardware implementation of spiking neural networks and oscillatory neural networks based on oxide artificial neurons is demonstrated.Finally, the challenges of oxide neuron devices, arrays and networks, as well as prospect for their applications are pointed out.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Neural Networks and Reservoir Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. ROY K, JAISWAL A, PANDA P. Towards spike-based machine intelligence with neuromorphic computing. Nature, 2019, 575(7784): 607.10.1038/s41586-019-1677-2 ↗
2. BOAHEN K. Dendrocentric learning for synthetic intelligence. Nature, 2022, 612(7938): 43.10.1038/s41586-022-05340-6 ↗
3. MEROLLA P A, ARTHUR J V, ALVAREZ-ICAZA R, et al. A million spiking-neuron integrated circuit with a scalable communication network and interface. Science, 2014, 345(6197): 668.10.1126/science.1254642 ↗
4. IMAM N, CLELAND T A. Rapid online learning and robust recall in a neuromorphic olfactory circuit. Nature Machine Intelligence, 2020, 2(3): 181.10.1038/s42256-020-0159-4 ↗
5. PEI J, DENG L, SONG S, et al. Towards artificial general intelligence with hybrid Tianjic chip architecture. Nature, 2019, 572(7767): 106.10.1038/s41586-019-1424-8 ↗
6. SHEN J, MA D, GU Z, et al. Darwin: a neuromorphic hardware co-processor based on spiking neural networks. Science China Information Sciences, 2015, 59(2): 023401.10.1007/s11432-015-5511-7 ↗
7. HU L, YANG J, WANG J, et al. All-optically controlled memristor for optoelectronic neuromorphic computing. Advanced Functional Materials, 2021, 31(4): 2005582.10.1002/adfm.202005582 ↗
8. WANG T, RAN H, ZHOU G. Defect-induced analogue resistive switching behavior in FeOx-based memristor and synaptic paired-pulse facilitation feature. Journal of Inorganic Materials, 2023, 38(4): 437.10.15541/jim20220721 ↗
9. WAN C, HE Y, JIANG S, et al. Emerging devices for biologically accurate neuron. ACS Applied Electronic Materials, 2020, 2(2): 389.10.1021/acsaelm.9b00702 ↗
10. FARRANT M, NUSSER Z. Variations on an inhibitory theme: phasic and tonic activation of GABA(A) receptors. Nature Reviews Neuroscience, 2005, 6(3): 215.10.1038/nrn1625 ↗
11. MARKRAM H, TOLEDO-RODRIGUEZ M, WANG Y, et al. Interneurons of the neocortical inhibitory system. Nature Reviews Neuroscience, 2004, 5(10): 793.10.1038/nrn1519 ↗
12. IZHIKEVICH E M. Which model to use for cortical spiking neurons? IEEE Transactions on Neural Networks, 2004, 15(5): 1063.10.1109/TNN.2004.832719 ↗
13. HODGKIN A L, HUXLEY A F. The components of membrane conductance in the giant axon of loligo. The Journal of Physiology, 1952, 116(4): 473.10.1113/jphysiol.1952.sp004718 ↗
14. HODGKIN A L, HUXLEY A F. Currents carried by sodium and potassium ions through the membrane of the giant axon of loligo. The Journal of Physiology, 1952, 116(4): 449.10.1113/jphysiol.1952.sp004717 ↗
15. BUGMANN G. Summation and multiplication: two distinct operation domains of leaky integrate-and-fire neurons. Network: Computation in Neural Systems, 1991, 2(4): 489.10.1088/0954-898X_2_4_010 ↗
16. XU L F, LI C D, CHEN L. Contrastive analysis of neuron model. Acta Physica Sinica, 2016, 65(24): 240701.10.7498/aps.65.240701 ↗
17. NEUMANN J V. Non-linear capacitance or inductance switching, amplifying and memory organs. USA, 2,815,488, 1957-3-12.
18. WIGINGTON R L. A new concept in computing. Proceedings of the IRE, 1959, 47(4): 516.10.1109/JRPROC.1959.287311 ↗
19. SOBEL E C, TANK D W. In vivo Ca2+ dynamics in a cricket auditory neuron: an example of chemical computation. Science, 1994, 263(5148): 823.10.1126/science.263.5148.823 ↗
20. PERON S, GABBIANI F. Spike frequency adaptation mediates looming stimulus selectivity in a collision-detecting neuron. Nature Neuroscience, 2009, 12(3): 318.10.1038/nn.2259 ↗
21. ISAACSON J S, SCANZIANI M. How inhibition shapes cortical activity. Neuron, 2011, 72(2): 231.10.1016/j.neuron.2011.09.027 ↗
22. ZHOU Y, CHEN H, WANG Y. Role of lateral inhibition on visual number sense. Frontiers in Computational Neuroscience, 2022, 16: 810448.10.3389/fncom.2022.810448 ↗
23. MA Q, HAIDER M R, SHRESTHA V L, et al. Bursting Hodgkin-Huxley model-based ultra-low-power neuromimetic silicon neuron. Analog Integrated Circuits and Signal Processing, 2012, 73(1): 329.10.1007/s10470-012-9888-6 ↗
24. KWON M W, BAEK M H, HWANG S, et al. Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation. Journal of Applied Physics, 2018, 124(15): 152107.10.1063/1.5031929 ↗
25. CHATTERJEE D, KOTTANTHARAYIL A. A CMOS compatible bulk FinFET-based ultra low energy leaky integrate and fire neuron for spiking neural networks. IEEE Electron Device Letters, 2019, 40(8): 1301.10.1109/LED.2019.2924259 ↗
26. VALASEK J. Piezo-electric and allied phenomena in Rochelle salt. Physical Review, 1921, 17(4): 475.10.1103/PhysRev.17.475 ↗
27. ISHIBASHI Y, TAKAGI Y. Note on ferroelectric domain switching. Journal of the Physical Society of Japan, 1971, 31(2): 506.10.1143/JPSJ.31.506 ↗
28. GROLLIER J, QUERLIOZ D, CAMSARI K Y, et al. Neuromorphic spintronics. Nature Electronics, 2020, 3(7): 360.10.1038/s41928-019-0360-9 ↗
29. CHUA L. Memristor-the missing circuit element. IEEE Transactions on Circuit Theory, 1971, 18(5): 507.10.1109/TCT.1971.1083337 ↗
30. CHUA L. Memristor, Hodgkin-Huxley, and edge of chaos. Nanotechnology, 2013, 24(38): 383001.10.1088/0957-4484/24/38/383001 ↗
31. PICKETT M D, MEDEIROS-RIBEIRO G, WILLIAMS R S. A scalable neuristor built with mott memristors. Nature Materials, 2013, 12(2): 114.10.1038/nmat3510 ↗
32. YI W, TSANG K K, LAM S K, et al. Biological plausibility and stochasticity in scalable VO2 active memristor neurons. Nature Communications, 2018, 9: 4661.10.1038/s41467-018-07052-w ↗
33. XU Y, GAO S, LI Z, et al. Adaptive Hodgkin-Huxley neuron for retina-inspired perception. Advanced Intelligent Systems, 2022, 4(12): 2200210.10.1002/aisy.202200210 ↗
34. HUANG H M, YANG R, TAN Z H, et al. Quasi-Hodgkin-Huxley neurons with leaky integrate-and-fire functions physically realized with memristive devices. Advanced Materials, 2019, 31(3): 1803849.10.1002/adma.201803849 ↗
35. PICKETT M D, STANLEY WILLIAMS R. Phase transitions enable computational universality in neuristor-based cellular automata. Nanotechnology, 2013, 24(38): 384002.10.1088/0957-4484/24/38/384002 ↗
36. BUSCAGLIA M T, BUSCAGLIA V, VIVIANI M, et al. Ferroelectric properties of dense nanocrystalline BaTiO3 ceramics. Nanotechnology, 2004, 15(9): 1113.10.1088/0957-4484/15/9/001 ↗
37. LI Z X, LIU X L, CHEN W J, et al. Switchable diode effect in ferroelectric thin film: high dependence on poling process and temperature. AIP Advances, 2014, 4(12): 127111.10.1063/1.4903772 ↗
38. WANG J, ZHENG H, MA Z, et al. Epitaxial BiFeO3 thin films on Si. Applied Physics Letters, 2004, 85(13): 2574.10.1063/1.1799234 ↗
39. BÖSCKE T S, MÜLLER J, BRÄUHAUS D, et al. Ferroelectricity in hafnium oxide thin films. Applied Physics Letters, 2011, 99(10): 102903.10.1063/1.3634052 ↗
40. MULAOSMANOVIC H, MIKOLAJICK T, SLESAZECK S. Accumulative polarization reversal in nanoscale ferroelectric transistors. ACS Applied Materials & Interfaces, 2018, 10(28): 23997.10.1021/acsami.8b08967 ↗
41. MULAOSMANOVIC H, MIKOLAJICK T, SLESAZECK S. Random number generation based on ferroelectric switching. IEEE Electron Device Letters, 2018, 39(1): 135.10.1109/LED.2017.2771818 ↗
42. MULAOSMANOVIC H, CHICCA E, BERTELE M, et al. Mimicking biological neurons with a nanoscale ferroelectric transistor. Nanoscale, 2018, 10(46): 21755.10.1039/C8NR07135G ↗
43. CAO R, ZHANG X, LIU S, et al. Compact artificial neuron based on anti-ferroelectric transistor. Nature Communications, 2022, 13: 7018.10.1038/s41467-022-34774-9 ↗
44. CHEN C, YANG M, LIU S, et al. Bio-inspired Neurons Based on Novel Leaky-FeFET with Ultra-low Hardware Cost and Advanced Functionality for All-ferroelectric Neural NetWork. Symposium on VLSI Technology, Kyoto, 2019: T136-T137.10.23919/VLSIT.2019.8776495 ↗
45. LUO J, YU L, LIU T, et al. Capacitor-less Stochastic Leaky-FeFET Neuron of Both Excitatory and Inhibitory Connections for SNN with Reduced Hardware Cost. IEEE International Electron Devices Meeting, San Francisco, 2019: 6.4.1-6.4.4.10.1109/IEDM19573.2019.8993535 ↗
46. KATINE J A, ALBERT F J, BUHRMAN R A, et al. Current- driven magnetization reversal and spin-wave excitations in Co/Cu/Co pillars. Physical Review Letters, 2000, 84(14): 3149.10.1103/PhysRevLett.84.3149 ↗
47. TSOI M, JANSEN A G, BASS J, et al. Generation and detection of phase-coherent current-driven magnons in magnetic multilayers. Nature, 2000, 406(6791): 46.10.1038/35017512 ↗
48. KURENKOV A, DUTTAGUPTA S, ZHANG C, et al. Artificial neuron and synapse realized in an antiferromagnet/ferromagnet heterostructure using dynamics of spin-orbit torque switching. Advanced Materials, 2019, 31(23): 1900636.10.1002/adma.201900636 ↗
49. YANG S, SHIN J, KIM T, et al. Integrated neuromorphic computing networks by artificial spin synapses and spin neurons. NPG Asia Materials, 2021, 13(1): 11.10.1038/s41427-021-00282-3 ↗
50. LIU J H, XU T, FENG H M, et al. Compensated ferrimagnet based artificial synapse and neuron for ultrafast neuromorphic computing. Advanced Functional Materials, 2022, 32(1): 2107870.10.1002/adfm.202107870 ↗
51. WANG D, TANG R, LIN H, et al. Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing. Nature Communications, 2023, 14: 1068.10.1038/s41467-023-36728-1 ↗
52. MA W J, LIN S P, LUO J M, et al. Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer. Applied Physics Letters, 2013, 103(26): 262903.10.1063/1.4852695 ↗
53. ZHOU G, SUN B, HU X, et al. Negative photoconductance effect: an extension function of the TiOx-based memristor. Advanced Science, 2021, 8(13): 2003765.10.1002/advs.202003765 ↗
54. ZHUGE F, LI K, FU B, et al. Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells. AIP Advances, 2015, 5(5): 057125.10.1063/1.4921089 ↗
55. HU L, FU S, CHEN Y, et al. Ultrasensitive memristive synapses based on lightly oxidized sulfide films. Advanced Materials, 2017, 29(24): 1606927.10.1002/adma.201606927 ↗
56. ZHANG S R, ZHOU L, MAO J Y, et al. Artificial synapse emulated by charge trapping-based resistive switching device. Advanced Materials Technologies, 2019, 4(2): 1800342.10.1002/admt.201800342 ↗
57. YOU J, YANG D, LI C, et al. Double dielectric layer metal-oxide memristor: design and applications. Journal of Inorganic Materials, 2023, 38(4): 387.10.15541/jim20220760 ↗
58. ZHUGE X, ZHU R, WANG J, et al. Oxide memristors for brain-inspired computing. Journal of Inorganic Materials, 2023, 38(10): 1149.10.15541/jim20230066 ↗
59. YANG J, HU L, SHEN L, et al. Optically driven intelligent computing with ZnO memristor. Fundamental Research, 2024, 4(1): 158.10.1016/j.fmre.2022.06.019 ↗
60. LASHKARE S, CHOUHAN S, CHAVAN T, et al. PCMO RRAM for integrate-and-fire neuron in spiking neural networks. IEEE Electron Device Letters, 2018, 39(4): 484.10.1109/LED.2018.2805822 ↗
61. WANG J J, HU S G, ZHAN X T, et al. Handwritten-digit recognition by hybrid convolutional neural network based on HfO2 memristive spiking-neuron. Scientific Reports, 2018, 8: 12546.10.1038/s41598-018-30768-0 ↗
62. TUMA T, PANTAZI A, LE GALLO M, et al. Stochastic phase-change neurons. Nature Nanotechnology, 2016, 11(8): 693.10.1038/nnano.2016.70 ↗
63. ZHU J X, ZHANG X M, WANG R, et al. Flexible memristive spiking neuron for neuromorphic sensing and computing. Acta Physica Sinica, 2022, 71(14): 148503.10.7498/aps.71.20212323 ↗
64. GU Y N, LIANG Y, WANG G Y, et al. Design of NbOx memristive neuron and its application in spiking neural networks. Acta Physica Sinica, 2022, 71(11): 110501.10.7498/aps.71.20220141 ↗
65. STOLIAR P, TRANCHANT J, CORRAZE B, et al. A leaky- integrate-and-fire neuron analog realized with a Mott insulator. Advanced Functional Materials, 2017, 27(11): 1604740.10.1002/adfm.201604740 ↗
66. ADDA C, CORRAZE B, STOLIAR P, et al. Mott insulators: a large class of materials for leaky integrate and fire (LIF) artificial neuron. Journal of Applied Physics, 2018, 124(15): 152124.10.1063/1.5042756 ↗
67. PARIHAR A, JERRY M, DATTA S, et al. Stochastic IMT (insulator-metal-transition) neurons: an interplay of thermal and threshold noise at bifurcation. Frontiers in Neuroscience, 2018, 12: 210.10.3389/fnins.2018.00210 ↗
68. CHEN P, ZHANG X M, WU Z H, et al. High-yield and uniform NbOx-based threshold switching devices for neuron applications. IEEE Transactions on Electron Devices, 2022, 69(5): 2391.10.1109/TED.2022.3161614 ↗
69. SUN Y M, SONG C, YIN S Q, et al. Design of a controllable redox-diffusive threshold switching memristor. Advanced Electronic Materials, 2020, 6(11): 2000695.10.1002/aelm.202000695 ↗
70. WANG Z, JOSHI S, SAVEL'EV S E, et al. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing. Nature Materials, 2017, 16(1): 101.10.1038/nmat4756 ↗
71. ZHANG X M, WANG W, LIU Q, et al. An artificial neuron based on a threshold switching memristor. IEEE Electron Device Letters, 2018, 39(2): 308.10.1109/LED.2017.2782752 ↗
72. LEE D, KWAK M, MOON K, et al. Various threshold switching devices for integrate and fire neuron applications. Advanced Electronic Materials, 2019, 5(9): 1800866.10.1002/aelm.201800866 ↗
73. WANG X, CHEN C, ZHU L, et al. Vertically integrated spiking cone photoreceptor arrays for color perception. Nature Communications, 2023, 14: 3444.10.1038/s41467-023-39143-8 ↗
74. WANG Y, XU H, WANG W, et al. A configurable artificial neuron based on a threshold-tunable TiN/NbOₓ/Pt memristor. IEEE Electron Device Letters, 2022, 43(4): 631.10.1109/LED.2022.3150034 ↗
75. SPECHT D F. Probabilistic neural networks and the polynomial adaline as complementary techniques for classification. IEEE Transactions on Neural Networks, 1990, 1(1): 111.10.1109/72.80210 ↗
76. LI Z X, GENG X Y, WANG J, et al. Emerging artificial neuron devices for probabilistic computing. Frontiers in Neuroscience, 2021, 15: 717947.10.3389/fnins.2021.717947 ↗
77. CARBONI R, IELMINI D. Stochastic memory devices for security and computing. Advanced Electronic Materials, 2019, 5(9): 1900198.10.1002/aelm.201900198 ↗
78. WANG K, HU Q, GAO B, et al. Threshold switching memristor-based stochastic neurons for probabilistic computing. Materials Horizons, 2021, 8(2): 619.10.1039/D0MH01759K ↗
79. BOUSOULAS P, TSIOUSTAS C, HADFIELD J, et al. Low power stochastic neurons from SiO2-based bilayer conductive bridge memristors for probabilistic spiking neural network applications-part I: experimental characterization. IEEE Transactions on Electron Devices, 2022, 69(5): 2360.10.1109/TED.2022.3160138 ↗
80. BOUSOULAS P, TSIOUSTAS C, HADFIELD J, et al. Low power stochastic neurons from SiO2-based bilayer conductive bridge memristors for probabilistic spiking neural network applications-part II: modeling. IEEE Transactions on Electron Devices, 2022, 69(5): 2368.10.1109/TED.2022.3160140 ↗
81. CHOI S, KIM G S, YANG J, et al. Controllable SiOx nanorod memristive neuron for probabilistic bayesian inference. Advanced Materials, 2022, 34(1): 2104598.10.1002/adma.202104598 ↗
82. DANG B J, LIU K Q, ZHU J D, et al. Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing. APL Materials, 2019, 7(7): 071114.10.1063/1.5109090 ↗
83. MAO H W, HE Y L, CHEN C S, et al. A spiking stochastic neuron based on stacked InGaZnO memristors. Advanced Electronic Materials, 2022, 8(2): 2100918.10.1002/aelm.202100918 ↗
84. YAN L, PEI Y F, WANG J J, et al. High-speed Si films based threshold switching device and its artificial neuron application. Applied Physics Letters, 2021, 119(15): 153507.10.1063/5.0063078 ↗
85. WANG J, TENG C, ZHANG Z, et al. A scalable artificial neuron based on ultrathin two-dimensional titanium oxide. ACS Nano, 2021, 15(9): 15123.10.1021/acsnano.1c05565 ↗
86. CHEN Y H, WANG Y, LUO Y H, et al. Realization of artificial neuron using MXene bi-directional threshold switching memristors. IEEE Electron Device Letters, 2019, 40(10): 1686.10.1109/LED.2019.2936261 ↗
87. KIM T, KIM S H, PARK J H, et al. An artificial neuron using a bipolar electrochemical metallization switch and its enhanced spiking properties through filament confinement. Advanced Electronic Materials, 2021, 7(1): 2000410.10.1002/aelm.202000410 ↗
88. TIAN Y, ZHU X, SUN C, et al. Intrinsically stretchable threshold switching memristor for artificial neuron implementations. Journal of Inorganic Materials, 2023, 38(4): 413.10.15541/jim20220712 ↗
89. LI H, HU J, CHEN A, et al. Single-transistor neuron with excitatory-inhibitory spatiotemporal dynamics applied for neuronal oscillations. Advanced Materials, 2022, 34(51): 2207371.10.1002/adma.202207371 ↗
90. CHEN C, HE Y, MAO H, et al. A photoelectric spiking neuron for visual depth perception. Advanced Materials, 2022, 34(20): 2201895.10.1002/adma.202201895 ↗
91. WU Q, DANG B, LU C, et al. Spike encoding with optic sensory neurons enable a pulse coupled neural network for ultraviolet image segmentation. Nano Letters, 2020, 20(11): 8015.10.1021/acs.nanolett.0c02892 ↗
92. PEI Y, YAN L, WU Z, et al. Artificial visual perception nervous system based on low-dimensional material photoelectric memristors. ACS Nano, 2021, 15(11): 17319.10.1021/acsnano.1c04676 ↗
93. YOON S M, TOKUMITSU E, ISHIWARA H. Ferroelectric neuron integrated circuits using SrBi2Ta2O9-gate FET's and CMOS Schmitt-trigger oscillators. IEEE Transactions on Electron Devices, 2000, 47(8): 1630.10.1109/16.853041 ↗
94. GAO L G, CHEN P Y, YU S M. NbOx based oscillation neuron for neuromorphic computing. Applied Physics Letters, 2017, 111(10): 103503.10.1063/1.4991917 ↗
95. ZHAO B, RAVICHANDRAN J. Low-power microwave relaxation oscillators based on phase-change oxides for neuromorphic computing. Physical Review Applied, 2019, 11(1): 014020.10.1103/PhysRevApplied.11.014020 ↗
96. CORTI E, GOTSMANN B, MOSELUND K, et al. Scaled resistively-coupled VO2 oscillators for neuromorphic computing. Solid-State Electronics, 2020, 168: 107729.10.1016/j.sse.2019.107729 ↗
97. LIU H, WU T, YAN X, et al. A tantalum disulfide charge-density- wave stochastic artificial neuron for emulating neural statistical properties. Nano Letters, 2021, 21(8): 3465.10.1021/acs.nanolett.1c00108 ↗
98. WU L D, WANG Z W, BAO L, et al. Implementation of neuronal intrinsic plasticity by oscillatory device in spiking neural network. IEEE Transactions on Electron Devices, 2022, 69(4): 1830.10.1109/TED.2022.3152468 ↗
99. KISELEV S I, SANKEY J C, KRIVOROTOV I N, et al. Microwave oscillations of a nanomagnet driven by a spin-polarized current. Nature, 2003, 425(6956): 380.10.1038/nature01967 ↗
100. BERTOTTI G, SERPICO C, MAYERGOYZ I D, et al. Magnetization switching and microwave oscillations in nanomagnets driven by spin-polarized currents. Physical Review Letters, 2005, 94(12): 127206.10.1103/PhysRevLett.94.127206 ↗