Growth and Characterization of Sulfur-doped GaSe Single Crystals

It is difficult to obtain high quality sulfur-doped GaSe single crystal due to the intensive convection and solution diffusion in the melt. High quality GaSe 0.89 S 0.11 single crystal with dimensions of 20 mm60 mm was successfully grown by Bridgman method using modified furnace with crucible rotation technique. The crystal was characterized by using energy dispersive spectrometer, X-ray diffractometer, nanoindentation, and Fourier infrared spectrometer.