Defects in Ge Doped SiC Crystals
Source abstract
Abstract
张福生 1 , 陈秀芳 1, 2 , 崔潆心 1 , 肖龙飞 1 , 谢雪健 1 , 徐现刚 1, 2 , 胡小波 1,2 (1.山东大学 晶体材料国家重点实验室, 济南 250100; 2. 全球能源互联网(山东)协同创新中心, 济南 250061)
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References
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