DataVXJournal of Inorganic MaterialsPaper
journal article·2012-09-14

Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene

You-Wei ZHANG, Li WAN, Xin-Hong CHENG, Zhong-Jian WANG, Chao XIA, Duo CAO, Ting-Ting JIA, Yue-Hui YU

Journal of Inorganic Materials· Volume 27· Issue 9
Publisher page
Source abstract

Abstract

Al2O3 films were deposited directly onto the surface of graphene by H2O-based atomic layer deposition (ALD) method, where physically absorbed water molecules acted as oxidant and the growing temperature changed from 60 degrees C to 260 degrees C. The morp
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsMaterials processing

OpenAlex topics: Graphene research and applications · Semiconductor materials and devices · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (15)

Show source-provided references
1. Xuan Y
2. Ferrari A C
3. Gosset L G10.1016/S0022-3093(02)00958-4 ↗
4. Hwang E H
5. Casiraghi C10.1021/nl8032697 ↗
6. Wang X R10.1021/ja8023059 ↗
7. Yun S J10.1116/1.580895 ↗
8. Liao Lei10.1016/j.mser.2010.07.003 ↗
9. Renault O10.1116/1.1507330 ↗
10. Ni Z H10.1021/nn900130g ↗
11. Casiraghi C
12. Pimenta M A10.1039/b613962k ↗
13. Pirkle A
14. George S M10.1021/nn800031m ↗
15. Ni Z H10.1021/nn800031m ↗