Thermal Stability of Nb/Mg3SbBi Interface
Source abstract
Abstract
Nb/Mg3.2 SbBi 0.996 Se 0.004 )样品, 然后采用 Nb 粉作为扩散阻挡层一步烧结制 备 Mg 3 SbBi/Nb/Mg 3 SbBi"三明治"结构样品, 系统研究界面层的组成、微结构以及电阻随老化时间演变过程。加速 老化实验(525 ℃/70 h; 525 ℃/170 h; 525 ℃/360 h)研究发现, Nb 阻挡层中的 Mg-Sb/Bi 组分发生偏析, 表面产生裂 纹, 抛光处理后界面连接完好, 无裂纹和孔洞, 界面扩散层厚度随老化时间延长缓慢增加至 1.6 m。Nb/Mg 3 SbBi 界面电阻率从初始的 12.9 •cm 2 增大到 19.8、27.4和 31.8 •cm 2 , 表明老化导致界面处元素发生微弱扩散, 但 Nb 阻挡层仍呈现优异的阻挡性能。因此, 在 Mg 3 (Sb,Bi) 2 基热电材料体系中, 选择界面扩散微弱且结构致密的 Nb 作为阻挡层材料, 可以在确保连接可靠的同时有效阻挡 Mg、Sb 元素扩散, 从而提升 Mg 3 (Sb,Bi) 2 基器件的稳定性 和可靠性, 推动其在中温发电领域的应用。
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Superconductivity in MgB2 and Alloys · Advanced Thermoelectric Materials and Devices · Surface and Thin Film Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
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