Nb-modified Bi4Ti3O12 Piezoelectric for High Temperature Applications
Source abstract
Abstract
采用固相法(成型压力~12MPa)获得了Nb改性的Bi 4 Ti 3 O 12 (BIT+ x mol%Nb2O5)层状压电陶瓷. 研究发现随着Nb 2 O 5 含量的增加, a - b 面取向的晶粒逐渐增多, 晶粒尺寸愈细化与均匀. Nb 2 O 5 的引入明显降低了BIT系列陶瓷的导电率和介电损耗, 提高了陶瓷的相对密度﹑压电与机电性能. 适量Nb 2 O 5 ( x =4.00)掺杂时, 陶瓷的电导率(~10?13S/cm)比纯BIT的降低了2个数量级, 且该陶瓷的相对密度 r =98.7%, tan δ =0.23%, d 33 =18pC/N, Q m =2804, k p =8.1%, k t =18.6%, N p =2227Hz·m, N t =2025Hz·m. BIT+ x mol%Nb 2 O 5 ( x =4.00)陶瓷在600℃经退极化处理后, 其 d 33 基本保持不变(~17pC/N), 表明该材料在高温器件领域具有良好的应用前景.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Microwave Dielectric Ceramics Synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
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