Flat Shoulder Congruent Lithium Niobate Crystals Grown by the Czochralski Method
Source abstract
Abstract
The shoulder of the crystals grown by the Czochralski method is generally inclined, leading to poor quality and difficult processing, which then result in low utilization rate of the grown crystal.Take congruent lithium niobate (CLN) crystal as an example, this study used numerical simulation and experimental method to investigate the thermal field and growth process of flat shoulder crystal growth by the Czochralski method which can well acceptedly overcome the above problems.The result shows that the shape of the solid-liquid interface should be convex toward melt at the stage of shouldering.Temperature gradient near solid-liquid interface can be reduced by lowering the after-heater position (10 mm) to avoid the formation of polycrystalline.Control of the shouldering speed is the main way while control heating power is the accurate way to ensure the trend of shouldering.Accelerating the speed at the initial stage of shouldering (30 mm) and slowdown the speed at the middle and later stage of shouldering ( 35 mm) can shorten the period of shouldering and avoid defect inclusion.The pulling rate (0-1.5 mm/h) can be changed rapidly (1.5-2 h) without affecting the trend and quality of shouldering by adjusting power with a small amplitude (t=10 min, v= 0.2 mm/h).By using these adjusting ways to thermal field and growth process, a series of 3-inch (1 inch=25.4mm) flat shoulder CLN crystals with good optical homogeneity have been successfully grown.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Photorefractive and Nonlinear Optics · Photonic and Optical Devices · Photonic Crystals and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
Show source-provided references
1. MIN N B. The Physical Basis of Crystal Growth. Nanjing: Nanjing University Press, 2019: 7- 11.
2. YANG L, ZUO R, SU W J, et al. Study on numerical simulation of thermal stress at different stages in Kyropoulos sapphire crystal growth. Materials Reports, 2012, 26(11): 134.
3. MÜLLER G. Experimental analysis and modeling of melt growth processes. Journal of Crystal Growth, 2002, 237-239(3): 1628.10.1016/S0022-0248(01)02356-9 ↗
4. ZHANG H, JIANG T Y, CHEN X J. Blossom of boule shoulder in growing Nd:YAG crystals. Journal of Synthetic Crystals, 1991, Z1: 265.
5. ZHOU Y D, ZANG J C, LIU G Q. Growth technique of Pb2MoO5 single crystal and analysing the causes of crystal cracks. Journal of Beijing University of Technology, 1983, 9(1): 35.
6. JIN J R, XU R Y, ZHU Q B, et al. Growth of high quality lithium niobate crystal. Journal of Synthetic Crystals, 1981, 1: 11.
7. YAN T. Growth, Structure and Properties of High Quality LiNbO3 and LiTaO3 Crystals. Jinan: Doctoral Dissertation of Shandong University, 2008.
8. STELIAN C, SEN G, DUFFAR T. Comparison of thermal stress computations in Czochralski and Kyropoulos growth of sapphire crystals. Journal of Crystal Growth, 2018, 499: 77.10.1016/j.jcrysgro.2018.08.002 ↗
9. CHEN C H, CHEN J C, CHIUE Y S, et al. Thermal and stress distributions in larger sapphire crystals during the cooling process in a Kyropoulos furnace. Journal of Crystal Growth, 2014, 385: 55.10.1016/j.jcrysgro.2013.04.060 ↗
10. YAO T, ZUO H B, HAN J C, et al. The simulation of the stress distribution in sapphire crystal growth progress. Journal Harbin University Science & Technology, 2006, 11(5): 100.
11. LIU J H, QIAO M Y. Theoretical analysis of the cracking of crystal grown by Czochralski method. Journal of Crystal Growth, 1984, 4: 281.
12. CHEN Y. Application of flat crystal formation in Germanium mono-crystal growing. Yunnan Metallurgy, 2002, 31(6): 36.
13. BUDENKOVA O, VASILIEV M, YUFEREV V, et al. Effect of internal radiation on the solid-liquid interface shape in low and high thermal gradient Czochralski oxide growth. Journal of Crystal Growth, 2007, 303(1): 156.10.1016/j.jcrysgro.2006.12.055 ↗
14. BERMÚDEZ V, BUDENKOVA O N, YUFEREV V S, et al. Effect of the shouldering angle on the shape of the solid-liquid interface and temperature fields in sillenite-type crystals growth. Journal of Crystal Growth, 2005, 279(1/2): 82.10.1016/j.jcrysgro.2004.12.181 ↗
15. GROUP of 104. Growth of <104> orientated lithium niobate crystals. Journal of Inorganic Materials, 1977, 02: 9.
16. GALAZKA Z. Radial temperature distribution in LiNbO3 crystals pulled by the Czochralski technique. Journal of Crystal Growth, 1997, 178(3): 345.10.1016/S0022-0248(96)01159-1 ↗
17. XU Y Q, LI X C, SUN N F, et al. The study of ϕ100 mm sulfur doped InP single crystal growth. Semiconductor Technology, 2004, 29 (3): 31.
18. LI Y R, HUANG Q F, LI X L, et al. Study on the progress of seeding and shoulder controlling on HP-LEC InP single crystal growth. Semiconductor Technology, 2013, 38(11): 840.
19. ROJO J C, DIÉGUEZ E, DERBY J J. A heat shield to control thermal gradients, melt convection, and interface shape during shouldering in Czochralski oxide growth. Journal of Crystal Growth, 1999, 200(1/2): 329.10.1016/S0022-0248(98)01250-0 ↗
20. SONG W. Numerical Simulation Analysis of Czochralski Growth Processes for Langasite Crystal. Jinan: Master Dissertation of Shandong University, 2009.
21. ZHANG Z J. Growth of flat shoulder germanium single crystal using large size ratio of crystal to crucible. Journal of Yunnan University, 2002, 24(1A): 78.
22. QIN J, SUN J, HAO Y X, et al. Effect of exposed crucible wall on the Czochralski growth of an LN crystal. CrystEngComm, 2023, 25: 450.10.1039/D2CE01304E ↗
23. SHANG J F, SUN J, ZHANG Y J, et al. A method to measure electro-optic coefficients of crystals by combining conoscopic interference and near optical axis electro-optic modulation. Journal of Synthetic Crystals, 2015, 44(11): 2925.
24. WU B C. Improvement of optical homogeneity of LN crystal by heat treating. Chinese Journal of Lasers, 1978, 5(1): 40.
25. TAKAGI K, FUKAZAWA T, ISHII M. Inversion of the direction of the solid-liquid interface on the Czochralski growth of GGG crystals. Journal of Crystal Growth, 1976, 32(1): 89.10.1016/0022-0248(76)90014-2 ↗
26. WANG S. Hot Zone Design and Thermal Stress Analysis during Growth of Bulk Crystals. Hubei: Doctoral dissertation of Huazhong University of Science and Technology, 2016.
27. STOCKMEIER L, LEHMANN L, MILLER A, et al. Dislocation formation in heavily as-doped Czochralski grown silicon. Crystal Research & Technology, 2017, 52(8): 1600373.10.1002/crat.201600373 ↗
28. BRICE J C. The cracking of Czochralski-grown crystals. Journal of Crystal Growth, 1977, 42: 427.10.1016/0022-0248(77)90226-3 ↗
29. LIU J H, QIAO M Y, LI J L. Growth of LN crystal. Journal of Changchun University of Science and Technology, 1987, 3: 73.
30. WANG S, FANG H. Dependence of thermal stress evolution on power allocation during Kyropoulos sapphire cooling process. Applied T1ermal Engineering, 2016, 95: 150.10.1016/j.applthermaleng.2015.11.003 ↗
31. MIL'VIDSKII M G, BOCHKAREV E P. Creation of defects during the growth of semiconductor single crystals and films. Journal of Crystal Growth, 1978, 44(1): 61.10.1016/0022-0248(78)90329-9 ↗
32. TSUKADA T, KAKINOKI K, HOZAWA M, et al. Numerical and experimental studies on crack formation in LiNbO3 single crystal. Journal of Crystal Growth, 1997, 180(3/4): 543.10.1016/S0022-0248(97)00242-X ↗
33. ZHANG X Y, GUAN X J, PAN Z B, et al. Simulation on effect of heat shield position on the V/G and point defect and thermal stress of Czochralski silicon. Journal of Synthetic Crystals, 2014, 43(4): 771.
34. GUAN X J, ZHANG X Y, PAN Z B, et al. Simulation on effect of heat shield position on the melt and solid liquid interface Cz silicon. Journal of Synthetic Crystals, 2015, 44(2): 329.
35. CHEN Q H. On the crystal diameter change during the shouldering process in the Czochralski. Journal of Synthetic Crystals, 1984, 4: 345.
36. LIANG D D. Study on the Flat Shoulder Growth of Lithium Niobate Crystal. Tianjin: Master Dissertation of Nankai University, 2017.
37. YU G J, ZONG Y M, ZHANG Z H, et al. Bubbles distribution in sapphire crystal grown by Kyropoulos method. Journal of Synthetic Crystals, 2014, 43(6): 1332.
38. LI S H, PAN X H, LIU Y, et al. Interactions between bubble and interface during KTa1-xNbxO3 crystal growth. Journal of Inorganic Materials, 2017, 32(11): 1223.10.15541/jim20170068 ↗
39. MUKAIYAMA Y, SUEOKA K, MAEDA S, et al. Numerical analysis of effect of thermal stress depending on pulling rate on behavior of intrinsic point defects in large-diameter Si crystal grown by Czochralski method. Journal of Crystal Growth, 2020, 531: 125334.10.1016/j.jcrysgro.2019.125334 ↗