High Quality GaN Epitaxy Induced Nucleation by Ar Ion Implantation into Sapphire Substrate
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
Show source-provided references
1. SU H K, XU S R, TAO H C, et al. Improving the current spreading by Fe doping in n-GaN layer for GaN-based ultraviolet light- emitting diodes. IEEE Electron Device Letters, 2021, 42(9): 1346.10.1109/LED.2021.3100545 ↗
2. HE J Q, CHENG W C, WANG Q, et al. Recent advances in GaN-based power HEMT devices. Advanced Electronic Materials, 2021, 7(4): 2001045.10.1002/aelm.202001045 ↗
3. LI G Q, WEN L W, WEI J Y, et al. GaN-based light-emitting diodes on various substrates: a critical review. Reports on Progress in Physics, 2016, 79(5): 056501.10.1088/0034-4885/79/5/056501 ↗
4. NAKAMURA S. InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices. IEEE Journal of Selected Topics in Quantum Electronics, 1998, 4(3): 483.10.1109/2944.704105 ↗
5. BALIGA B J. Power semiconductor device figure of merit for high-frequency applications. IEEE Electron Device Letters, 1989, 10(10): 455.10.1109/55.43098 ↗
6. GAO Y, XU S R, PENG R S, et al. Comparative research of GaN growth mechanisms on patterned sapphire substrates with sputtered AlON nucleation layers. Materials, 2020, 13(18): 3933.10.3390/ma13183933 ↗
7. ZHAO Y, XU S R, FENG L, et al. The performance improvement of AlGaN/GaN heterojunction by using nano-patterned sapphire substrate. Materials Science in Semiconductor Processing, 2022, 143: 106535.10.1016/j.mssp.2022.106535 ↗
8. DEGAVE F, RUTERANA P, NOUET G, et al. Analysis of the nucleation of GaN layers on (0001) sapphire. Materials Science and Engineering: B, 2002, 93(1/2/3): 177.10.1016/S0921-5107(02)00014-4 ↗
9. CHEN J J, SU Y K, LIN C L, et al. Enhanced output power of GaN-based LEDs with nano-patterned sapphire substrates. IEEE Photonics Technology Letters, 2008, 20(13): 1193.10.1109/LPT.2008.924900 ↗
10. YI M S, LEE H H, KIM D J, et al. Effects of growth temperature on GaN nucleation layers. Applied Physics Letters, 1999, 75(15): 2187.10.1063/1.124959 ↗
11. YANG T, UCHIDA K, MISHIMA T, et al. Control of initial nucleation by reducing the V/III ratio during the early stages of GaN growth. Physica Status Solidi (a), 2000, 180(1): 45.10.1002/1521-396X(200007)180:1<45::AID-PSSA45>3.0.CO;2-5 ↗
12. KHAN M S A, LIAO H, YU G, et al. Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel. Materials Science in Semiconductor Processing, 2021, 134: 106013.10.1016/j.mssp.2021.106013 ↗
13. ZHELEVA T S, SMITH S A, THOMSON D B, et al. Pendeo-epitaxy: a new approach for lateral growth of gallium nitride films. Journal of Electronic Materials, 1999, 28: L5.10.1007/s11664-999-0239-z ↗
14. HE C, ZHAO W, ZHANG K, et al. High-quality GaN epilayers achieved by facet-controlled epitaxial lateral overgrowth on sputtered AlN/PSS templates. ACS Applied Materials & Interfaces, 2017, 9(49): 43386.10.1021/acsami.7b14801 ↗
15. LEE Y J, HWANG J M, HSU T C, et al. Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates. IEEE Photonics Technology Letters, 2006, 18(10): 1152.10.1109/LPT.2006.874737 ↗
16. HIRAMATSU K, NISHIYAMA K, ONISHI M, et al. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO). Journal of Crystal Growth, 2000, 221(1-4): 316.10.1016/S0022-0248(00)00707-7 ↗
17. TAO H C, XU S R, ZHANG J C, et al. Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation. Optics Express, 2023, 31(13): 20850.10.1364/OE.492088 ↗
18. AMANO H, SAWAKI N, AKASAKI I, et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Applied Physics Letters, 1986, 48(5): 353.10.1063/1.96549 ↗
19. BAN K, YAMAMOTO J, TAKEDA K, et al. Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells. Applied Physics Express, 2011, 4(5): 052101.10.1143/APEX.4.052101 ↗
20. MORAM M A. X-ray diffraction of III-nitrides. Reports on Progress in Physics, 2009, 72(3): 036502.10.1088/0034-4885/72/3/036502 ↗
21. YEN C H, LAI W C, YANG Y Y, et al. GaN-based light-emitting diode with sputtered AlN nucleation layer. IEEE Photonics Technology Letters, 2011, 24(4): 294.10.1109/LPT.2011.2177654 ↗
22. PARK J, MOON D, PARK S, et al. Growth of GaN layer on patterned Al/Ti metal mask by metal-organic chemical vapor deposition. Japanese Journal of Applied Physics, 2012, 51(2R): 025501.10.7567/JJAP.51.025501 ↗
23. WANG L, WANG L, REN F, et al. GaN grown on AlN/sapphire templates. Acta Physica Sinica, 2010, 59(11): 8021.10.7498/aps.59.8021 ↗
24. LIANG F, ZHAO D G, JIANG D S, et al. Role of Si and C impurities in yellow and blue luminescence of unintentionally and Si-doped GaN. Nanomaterials, 2018, 8(12): 1026.10.3390/nano8121026 ↗
25. RIEGER W, METZGER T, ANGERER H, et al. Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films. Applied Physics Letters, 1996, 68(7): 970.10.1063/1.116115 ↗
26. KOZAWA T, KACHI T, KANO H, et al. Thermal stress in GaN epitaxial layers grown on sapphire substrates. Journal of Applied Physics, 1995, 77(9): 4389.10.1063/1.359465 ↗