Preparation and Thermoelectric Transport Properties of P-doped β-FeSi2
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Abstract
载流子浓度可达 10 22 cm -3 )，P 掺杂 β
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Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Semiconductor materials and interfaces · Surface and Thin Film Phenomena · Advanced Materials Characterization Techniques
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References (41)
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