High Temperature Interfacial Stability of Fe/Bi0.5Sb1.5Te3 Thermoelectric Elements
Source abstract
Abstract
The high temperature interfacial stability of thermoelectric (TE) elements, which is mainly evaluated by the inter-diffusion and interfacial resistivity at the interface between the barrier layer and the TE material, is one of the key factors determining the service performance and application prospects of TE devices. In this study, a screening method based on high-throughput strategy was employed to further improve the interfacial stability of P-type bismuth telluride TE devices, and Fe was proved the preferred barrier layer material for P-type Bi 0.5 Sb 1.5 Te 3 (P-BT). Then Fe/P-BT TE elements were prepared by one-step sintering. Evolution of the Fe/P-BT interfacial microstructure during high temperature accelerated aging was systematically studied, and stability of the interfacial resistivity was explored. It is found that during aging, the Fe/P-BT interface is well bonded and the composition of the ternary Fe-Sb-Te diffusion layer remains basically unchanged. The diffusion layer thickness increases linearly with the square root of the aging time and the growth activation energy is 199.6 kJ/mol. The initially low interfacial resistivity of the Fe/P-BT interface increases slowly with the prolonged aging time but remains below 10 cm 2 even after 16 d at 350 . The life prediction based on the interfacial diffusion kinetics indicates that Fe is a suitable barrier layer material for Bi 0.5 Sb 1.5 Te 3 TE elements.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Heusler alloys: electronic and magnetic properties · Topological Materials and Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
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1. ZHANG Q H, HUANG X Y, BAI S Q, et al. Thermoelectric devices for power generation: recent progress and future challenges. Advanced Engineering Materials, 2016,18(2):194-213.10.1002/adem.201500333 ↗
2. SHI X, CHEN L, UHER C. Recent advances in high-performance bulk thermoelectric materials. International Materials Reviews, 2016,61(6):379-415.10.1080/09506608.2016.1183075 ↗
3. LU Z, ZHANG H, MAO C, et al. Silk fabric-based wearable thermoelectric generator for energy harvesting from the human body. Applied Energy, 2016,164:57-63.10.1016/j.apenergy.2015.11.038 ↗
4. ZEBARJADI M, ESFARJANI K, DRESSELHANS M, et al. Perspectives on thermoelectrics: from fundamentals to device applications. Energy Environmental Science, 2012,5(1):5147-5162.10.1039/C1EE02497C ↗
5. ZHU T J. Recent advances in thermoelectric materials and devices. Journal of Inorganic Materials, 2019,34(3):233-236.10.15541/jim20180800 ↗
6. ZHANG Q H, BAI S Q, CHEN L D. Technologies and applications of thermoelectric devices: current status, challenges and prospects. Journal of Inorganic Materials, 2019,34(3):0279-0294.10.15541/jim20180465 ↗
7. HAO F, QIU P F, TANG Y S, et al. High efficiency Bi2Te3-based materials and devices for thermoelectric power generation between 100 and 300 ℃. Energy Environmental Science, 2016,9(10):3120-3127.10.1039/C6EE02017H ↗
8. YOON S M, DHARMAIAH P, KIM H S, et al. Investigation of thermoelectric properties with dispersion of Fe2O3 and Fe-85Ni nanospheres in Bi0.5Sb1.5Te3 matrix. Journal of Electronic Materials, 2017,46(5):2770-2777.
9. SHEN J, YIN Z, YANG S, et al. Improved thermoelectric performance of p-type bismuth antimony telluride bulk alloys prepared by hot forging. Journal of Electronic Materials, 2011,40(5):1095-1099.10.1007/s11664-011-1549-5 ↗
10. HU L, GAO H, LIU X, et al. Enhancement in thermoelectric performance of bismuth telluride based alloys by multi-scale microstructural effects. Journal of Materials Chemistry A, 2012,22(32):16484-16490.10.1039/c2jm32916f ↗
11. FAN J F, CHEN L F, BAI S Q, et al. Joining of Mo to CoSb3 by spark plasma sintering by inserting a Ti interlayer. Materials Letters, 2004,58(30):3876-3878.10.1016/j.matlet.2004.07.041 ↗
12. TANG Y S, BAI S Q, REN D D, et al. Interface structure and electrical property of Yb0.3Co4Sb12/Mo-Cu element prepared by welding using Ag-Cu-Zn solder. Journal of Inorganic Materials, 2015,30(3):256-260.
13. LIU W S, LIU Y, ZHE F, et al. Thermoelectric device: contact interface and interface materials. Journal of Inorganic Materials, 2019,34(3):0269-0279.10.15541/jim20180248 ↗
14. ZHAO D G, WANG L, CAI Y H, et al. One-step sintering of CoSb3 thermoelectric material and Cu-W alloy by spark plasma sintering. Materials Science Forum, Switzerland, 2009,610:389-393.10.4028/www.scientific.net/MSF.610-613.389 ↗
15. ZHAO D G, LI X Y, HE L, et al. Interfacial evolution behavior and reliability evaluation of CoSb3/Ti/Mo-Cu thermoelectric joints during accelerated thermal aging. Journal of Alloys and Compounds, 2009,477(1/2):425-431.10.1016/j.jallcom.2008.10.037 ↗
16. GU M, XIA X G, LI X, et al. Microstructural evolution of the interfacial layer in the Ti-Al/Yb0.6Co4Sb12 thermoelectric joints at high temperature. Journal of Alloys and Compounds, 2014,610:665-670.10.1016/j.jallcom.2014.05.087 ↗
17. CHEN S W, WU C Y, WU H J, et al. Interfacial reactions in Sn/Bi2Te3, Sn/Bi2Se3 and Sn/Bi2(Te1-xSex)3 couples. Journal of Alloys and Compounds, 2014,611:313-318.10.1016/j.jallcom.2014.05.127 ↗
18. CHEN S W, CHIU C N. Unusual cruciform pattern interfacial reactions in Sn/Te couples. Scripta Materialia, 2007,56(2):97-99.10.1016/j.scriptamat.2006.09.018 ↗
19. LAN Y C, WANG D Z, CHEN G, et al. Diffusion of nickel and tin in p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3 thermoelectric materials. Applied Physics Letters, 2008,92(10):101910.10.1063/1.2896310 ↗
20. CHEN L Q, MEI D Q, WANG Y C, et al. Ni barrier in Bi2Te3- based thermoelectric modules for reduced contact resistance and enhanced power generation properties. Journal of Alloys and Compounds, 2019,796:314-320.10.1016/j.jallcom.2019.04.293 ↗
21. CHEN S W, YANG T R, WU C Y, et al. Interfacial reactions in the Ni/(Bi0.25Sb0.75)2Te3 and Ni/Bi2(Te0.9Se0.1)3 couples. Journal of Alloys and Compounds, 2016,686:847-853.10.1016/j.jallcom.2016.06.207 ↗
22. LIU W, WANG H, WANG L, et al. Understanding of the contact of nanostructured thermoelectric n-type Bi2Te2.7Se0.3 legs for power generation applications. Journal of Materials Chemistry A, 2013,1(42):13093-13100.10.1039/c3ta13456c ↗
23. FENG S P, CHANG Y H, YANG J, et al. Reliable contact fabrication on nanostructured Bi2Te3-based thermoelectric materials. Phys. Chem. Chem. Phys., 2013,15(18):6757-6762.
24. LIN W C, LI Y S, WU A T. Study of diffusion barrier for solder/n-Type Bi2Te3and bonding strength for p- and n-type thermoelectric modules. Journal of Electronic Materials, 2017,47(1):148-154.10.1007/s11664-017-5906-x ↗
25. SONG E, SWRTZENTRUBER B S, KORIPELLA C R, et al. Highly effective GeNi alloy contact diffusion barrier for BiSbTe long-term thermal exposure. ACS Omega, 2019,4(5):9376-9382.10.1021/acsomega.9b00551 ↗
26. WANG C H, HEIEH H C, LEE H Y, et al. Co-P diffusion barrier for p-Bi2Te3 thermoelectric material. Journal of Electronic Materials, 2018,48(1):53-57.10.1007/s11664-018-6633-7 ↗
27. LIN W P, WESOLOWSKI D E, LEE C C. Barrier/bonding layers on bismuth telluride (Bi2Te3) for high temperature thermoelectric modules. Journal of Materials Science: Materials in Electronics, 2011,22(9):1313-1320.
28. HSU H H, CHENG C H, LIN Y L, et al. Structural stability of thermoelectric diffusion barriers: experimental results and first principles calculations. Applied Physics Letters, 2013,103(5):053902.10.1063/1.4817511 ↗
29. BAE N H, HAN S, LEE K E, et al. Diffusion at interfaces of micro thermoelectric devices. Current Applied Physics, 2011,11(5):40-44.10.1016/j.cap.2011.05.036 ↗
30. KACSICH T, KOLAWA E, FLEURIAL J, et al. Films of Ni-7at% V, Pd, Pt and Ta-Si-N as diffusion barriers for copper on. Journal of Physics D: Applied Physics, 1998,31(19):2406-2409.10.1088/0022-3727/31/19/007 ↗
31. GU M, BAI S Q, WU J, et al. A high-throughput strategy to screen interfacial diffusion barrier materials for thermoelectric modules. Journal of Materials Research, 2019,34(7):1179-1187.10.1557/jmr.2019.12 ↗
32. GU M, XIA X, HUANG X, et al. Study on the interfacial stability of p-type Ti/CeyFexCo4-xSb12 thermoelectric joints at high temperature. Journal of Alloys Compounds, 2016,671:238-244.10.1016/j.jallcom.2016.02.041 ↗
33. YAMAGUCHI G, SHIMADA M, KOIZUMI M, et al. Preparation and characterization of compounds of the system Fe(Sb1-xTex)2(0≤x≤1.0). Journal of Solid State Chemistry, 1980,34(2):241-245.10.1016/0022-4596(80)90227-3 ↗
34. ZHANG G H, LIAO J C, TANG Y S, et al. Interface stability of skutterudite thermoelectric materials/Ti88Al12. Journal of Inorganic Materials, 2018,33(8):889-894.10.15541/jim20170517 ↗