Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density
Source abstract
Abstract
低位错密度 8 英寸导电型碳化硅单晶衬底制备
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Advanced ceramic materials synthesis · Aluminum Alloys Composites Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (10)
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7. PENG Y, CHEN X F, PENG J, et al. Study on the growth of high quality semi-insulating ϕ150 mm 4H-SiC single crystal. Journal of Synthetic Crystals, 2016, 45(5): 1145.
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10. YANG G, LIU X S, LI J J. et al. Dislocations in 4H silicon carbide single crystals. Journal of Synthetic Crystals, 2022, 51(9): 1673.