Enhanced electron emission of carbon nanotube arrays grown using the resist‐protection‐assisted positioning technique

Abstract Field emitter arrays (FEAs) were developed using carbon nanotubes (CNTs) as electron emission sources. The CNTs were grown using a selective‐positioning technique with a resist‐protection layer. The light emission properties were studied through the electron emission of the CNTs on patterned islands, which were modulated with island diameter and spacing. The electron emission of CNT arrays with 5 μm diameters and 10 μm heights increased with increased spacing (from 10 μm to 40 μm). The electron emission current of the 40‐μm‐island‐spacing sample showed a current density of 1.33 mA/cm2 at E = 11 V/μm, and a turn‐on field of 7 V/μm at 1 μA emission current. Uniform electron emission current and light emission were achieved with 40 μm island spacing and 5 μm island diameter.