Characterization of lateral type field emitters with carbon‐based surface layer
Source abstract
Abstract
Abstract Lateral type poly‐silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation of an ideal field emission device with quasi‐zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon‐based thin layer on the cathode tip surface via a field‐assisted self‐aligning of carbon (FASAC) process. Fundamental lowering of the turn‐on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Carbon Nanotubes in Composites · Diamond and Carbon-based Materials Research · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
a School of Electronic and Electrical Engineering , Kyungpook National University , Taegu , 702–701 , Korea Phone: Fax: E-mail:
b School of Electronic and Electrical Engineering , Kyungpook National University , Taegu , 702–701 , Korea
c Research Institute of electronic and Telecommunication Technologies , Kwandong University , Kangwon , 215–800 , Korea
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