ASG(amorphous silicon TFT gate driver circuit) technology for mobile TFT‐LCD panel

Abstract We developed an a‐Si TFT‐LCD panel with integrated gate driver circuit using a standard 5‐MASK process. To minimize the effect of the a‐Si TFT current and LC's capacitance variation with temperature, we developed a new a‐Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3‐side free panel structure in a‐Si TFT‐LCD of QVGA (240 × 320) resolution. And using double ASG structure the dead space of TFT‐LCD panel could be further decreased.