journal article·1995-03

InP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substrates

M.L. Dotor, D. Golmayo, A. Calle, J.R. Sendra, J.V. Anguita, L. Gonzalez, Y. Gonzalez, F. Briones

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OpenAlex topics: Photonic and Optical Devices · Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices

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References (16)

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4. An In0.53Ga0.47As tunnel diode for monolithic multijunction solar cell application
5. High performance In0.47Ga0.53As tunnel junctions grown by chemical beam epitaxy on InP and GaAs and Si substrates
6. Briones · Appl. Phys. · 1989 · A49 · 72910.1007/BF00617001 ↗
7. Residual doping reduction in InP grown at low temperature by atomic layer molecular beam epitaxy
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9. Gonzalez · Electron. Lett. · 1994 · 30 · 26910.1049/el:19940124 ↗
10. High efficiency heteroepitaxial InP solar cells
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13. Dotor · Electron. Lett. · 1993 · 29 · 127010.1049/el:19930848 ↗
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16. Shen · J. Vac. Sci. Techn. · 1992 · B10 · 211310.1116/1.586179 ↗