Balance of efficiency and stability of silicon heterojunction solar cells
Source abstract
Abstract
Consideration must be given to both surface passivation and stability for the design of intrinsic hydrogenated amorphous silicon (a-Si:H(i)) films for silicon heterojunction (SHJ) solar cells. Although the underdense a-Si:H(i) films could offer outstanding surface passivation and lead to a high cell efficiency, it was hard for such a porous structure to prevent the intrusion of sodium-ion (Na +) and moisture during Na + aging test, resulting in the serious degradation of cell efficiency. Hence, we replaced the a-Si:H(i) film at the sun side with the a-SiO x :H(i) film and applied 20-s hydrogen plasma treatment to the underdense a-Si:H(i) film at the rear side in order to reduce the porosity of the a-Si:H(i) films without epitaxial growth. Additionally, an 80-nm SiO x layer was capped on the rear side of the optimized SHJ solar cells as a protective layer, leading to a high efficiency of 22.23% and the negligible degradation of only 0.27% abs after 3-h Na + aging test. This work offers a valid approach to balancing both the high efficiency and high stability of SHJ solar cells, which may guide the optimization of SHJ solar cells for real applications.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
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1. High-efficiency silicon heterojunction solar cells: a review10.1515/green-2011-0018 ↗
2. Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency10.1063/1.4937224 ↗
3. Silicon heterojunction solar cells: recent technological development and practical aspects - from lab to industry10.1016/j.solmat.2018.07.018 ↗
4. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 2610.1038/nenergy.2017.32 ↗
5. Solar cell efficiency tables (version 59)10.1002/pip.3506 ↗
6. 750 mV open circuit voltage measured on 50 μm thick silicon heterojunction solar cell10.1063/1.4817723 ↗
7. Abruptness of a-Si:H∕c-Si interface revealed by carrier lifetime measurements10.1063/1.2432297 ↗
8. Impact of epitaxial growth at the heterointerface of a-Si:H∕c-Si solar cells10.1063/1.2426900 ↗
9. Underdense a-Si:H film capped by a dense film as the passivation layer of a silicon heterojunction solar cell10.1063/1.4966941 ↗
10. 25.11% efficiency silicon heterojunction solar cell with low deposition rate intrinsic amorphous silicon buffer layers10.1016/j.solmat.2020.110643 ↗
11. Intrinsic amorphous silicon bilayers for effective surface passivation in silicon heterojunction solar cells: a comparative study of interfacial layers10.1002/pssa.202000743 ↗
12. Optimized amorphous silicon oxide buffer layers for silicon heterojunction solar cells with microcrystalline silicon oxide contact layers10.1063/1.4798603 ↗
13. Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells10.1063/1.2790815 ↗
14. Damp-heat-stable, high-efficiency, industrial-size silicon heterojunction solar cells10.1016/j.joule.2020.03.003 ↗
15. Highly crystallized tungsten doped indium oxide film stabilizes silicon heterojunction solar cells in sodium environment10.1016/j.solmat.2021.111387 ↗
16. Parameterization of the optical functions of amorphous materials in the interband region10.1063/1.118064 ↗
17. Vacancies and voids in hydrogenated amorphous silicon10.1063/1.1559657 ↗
18. Structural interpretation of the vibrational spectra of a-Si: H alloys10.1103/PhysRevB.19.2064 ↗
19. Evolution of a native oxide layer at the a-Si:H/c-Si interface and its influence on a silicon heterojunction solar cell10.1021/acsami.5b07709 ↗
20. Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment10.1103/PhysRevB.76.073202 ↗
21. Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films10.1103/PhysRevB.28.3225 ↗
22. Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon10.1103/PhysRevB.45.13367 ↗
23. Microstructure and the light‐induced metastability in hydrogenated amorphous silicon10.1063/1.99089 ↗
24. Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon10.1016/0039-6028(90)90390-T ↗
25. Chemical effects on the frequencies of Si-H vibrations in amorphous solids10.1016/0038-1098(79)90666-5 ↗
26. Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment10.1103/PhysRevB.52.5136 ↗
27. Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements10.1103/PhysRevB.69.125307 ↗
28. Impact of intrinsic amorphous silicon bilayers in silicon heterojunction solar cells10.1063/1.5045155 ↗
29. Experimental and simulated analysis of front versus all-back-contact silicon heterojunction solar cells: effect of interface and doped a-Si:H layer defects10.1002/pip.2400 ↗
30. Valence band alignment and hole transport in amorphous/crystalline silicon heterojunction solar cells10.1063/1.4926402 ↗
31. Functions of oxygen atoms in hydrogenated amorphous silicon oxide layers for rear-emitter silicon heterojunction solar cells10.1007/s10854-021-07315-1 ↗
32. Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells10.1063/1.4861404 ↗