Deposition of hydrogenated amorphous silicon (a-Si:H) films by hot-wire chemical vapor deposition (HW-CVD) method: Role of substrate temperature
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Abstract
Abstract Hydrogenated amorphous silicon (a-Si:H) thin films were deposited from pure silane (SiH 4 ) using hot-wire chemical vapor deposition (HW-CVD) method. We have investigated the effect of substrate temperature on the structural, optical and electrical properties of these films. Deposition rates up to 15 A s −1 and photosensitivity ∼10 6 were achieved for device quality material. Raman spectroscopic analysis showed the increase of Rayleigh scattering in the films with increase in substrate temperature. The full width at half maximum of TO peak ( Γ TO ) and deviation in bond angle (Δ θ ) are found smaller than those obtained for P-CVD deposited a-Si:H films. The hydrogen content in the films was found
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
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References (40)
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