Low temperature growth and extrinsic doping of mono-crystalline and polycrystalline II-VI solar cells by MBE
Source abstract
Abstract
Abstract An investigation of low temperature MBE growth of crystalline Cd(1-x)Zn(x)Te with 0 ≤x ≤ 1, in the range 220 ℃≤Ts ≤ 320 ℃, and extrinsic doping is conducted. This results in the construction of homo-junction crystalline solar cells on lattice-mismatched 211B and 111B GaAs substrates. Doping and composition studies of crystalline layers are used as a guide for low-temperature, high growth-rate, MBE grown polycrystalline CdTe solar cells on various n-type emitters and different back-contacts. The best resulting devices reach efficiencies of 14.7% under AM 1.5 g, without an anti-reflection coating.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
Show source-provided references
1. Solar cell efficiency tables (version 50)10.1002/pip.2909 ↗
2. MOCVD of thin film photovoltaic solar cells—Next-generation production technology?10.1016/j.jcrysgro.2008.07.121 ↗
3. See also:V. Evani, M. Khan, S. Collins, V. Palekis, D. Morel, C. Ferekides, Phosphorus doping of polycrystalline CdTe, Photovoltaic Specialists Conference (PVSC) 2016 IEEE 43rd, pp. 0435–0437, 2016.
4. See also: V. Barrioz, D.A. Lamb, E.W. Jones, Y.Y. Proskuryakov, S.J.C. Irvine and K. Durose, Atmospheric-pressure MOCVD dry process for CdTe PV devices and its production scalability, 23rd European Photovoltaic Solar Energy Conference, 1–5 September 2008, Valencia, Spain.
5. See also: V. Barrioz, D.A. Lamb, E.W. Jones, Y.Y. Proskuryakov, S.J.C. Irvine and K. Durose, Atmospheric-pressure MOCVD dry process for CdTe PV devices and its production scalability, 23rd European Photovoltaic Solar Energy Conference, 1–5 September 2008, Valencia, Spain.
6. 3rd QTR report, First Solar Analyst Day, Technology Update Presentation, 2013.
7. Plasma nitrogen doping of ZnTe, Cd l-xZnxTe, and CdTe by molecular beam epitaxy
8. Chemical trends of defect formation and doping limit in II-VI semiconductors: the case of CdTe10.1103/PhysRevB.66.155211 ↗
9. Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs
10. Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs
11. Dislocation density reduction in CdZnTe(100) on GaAs using strained layer superlattices10.1063/1.110676 ↗
12. Solvent extraction in the primary and secondary processing of zinc
13. Influence of CdCl2 activation treatment on ultra-thin Cd1−xZnxS/CdTe solar cells10.1016/j.tsf.2015.07.077 ↗
14. Transparent conducting oxides for photovoltaics: manipulation of fermi level, work function and energy band alignment10.3390/ma3114892 ↗
15. Development of efficient and stable back contacts on CdTe/CdS solar cells10.1016/S0040-6090(01)00792-1 ↗
16. Later in our research we found a 2%-5% mixture of O2 with argon in the sputter chamber for Mo pads produces a much deeper work function MoOx that makes excellent ohmic contact to ZnTe.
17. Burgelman · Thin Solid Films · 2000 · 361–362 · 52710.1016/S0040-6090(99)00825-1 ↗
18. Understanding the beneficial role of grain boundaries in polycrystalline solar cells from single‐grain‐boundary scanning probe microscopy10.1002/adfm.200500396 ↗
19. Plasma nitrogen doping of ZnTe, Cdl-xZnxTe, and CdTe by molecular beam epitaxy10.1063/1.112096 ↗
20. Stability of CdTe/CdS thin-film solar cells10.1016/S0927-0248(00)00014-3 ↗
21. Photon assisted growth of nitrogen-doped CdTe and the effects of hydrogen incorporation during growth
22. A highly effcient and stable CdTe/CdS thin film solar cell10.1016/S0927-0248(98)00204-9 ↗
23. D.L. Bätzner, A. Romeo, H. Zogg, A.N. Tiwari, R. Wendt, DEVELOPMENT OF EFFICIENT AND STABLE BACK CONTACTS ON CdTe/CdS SOLAR CELLS, Presented at the E-MRS Conference 30. 5.− 2.6.2000 in Strasbourg.