Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy
Source abstract
Abstract
Abstract The distribution of Bi atoms in Ga(As,Bi) samples on an atomic scale is investigated using aberration corrected high angle annular dark field imaging. With the help of statistical evaluations, it is shown that the Bi atoms are not randomly distributed. Instead, Bi ordering along the 〈100〉 and 〈101〉 crystallographic directions with chain lengths of up to 5 atoms is identified. Performing electronic structure calculations shows that this chain-like Bi arrangement is energetically favorable relative to isolated Bi atoms due to the stabilization by stronger bonds to shared Ga atoms and to in-plane Ga atoms.
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Research context
OpenAlex topics: Surface and Thin Film Phenomena · Semiconductor Quantum Structures and Devices · Advanced Chemical Physics Studies
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