Activating Basal Plane Inert Sites of Iron Telluride for Motivational Electromagnetic Microwave Absorption (Small 36/2025)
Source abstract
Abstract
Electromagnetic Microwave Absorption In article number 2502920, Qinghai Shu, Xijuan Lv, Jiadong Zhou, and co-workers reported a dual-defect engineering in FeTe flakes via one-step O2 plasma treatment. Te vacancies and O incorporation activates basal plane inert sites and boosts polarization relaxation loss. This approach offers a promising pathway toward high-performance electromagnetic microwave absorption.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Varied Academic Research Topics · Chalcogenide Semiconductor Thin Films
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Affiliations
School of Materials Science and Engineering Beijing Institute of Technology Beijing 100081 China
Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology Beijing 100081 China
School of Materials Science and Engineering Shanghai University Shanghai 200444 China
Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 China
References
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