journal article·2021-10

Reconfigurable 2D WSe2‐Based Memtransistor for Mimicking Homosynaptic and Heterosynaptic Plasticity (Small 41/2021)

Guanglong Ding, Baidong Yang, Ruo‐Si Chen, Wen‐Ai Mo, Kui Zhou, Yang Liu, Gang Shang, Yongbiao Zhai, Su‐Ting Han, Ye Zhou

Small· Volume 17· Issue 41
Publisher page

Abstract

Memtransistors In article number 2103175, Ye Zhou and co-workers utilize two-dimensional WSe2 as channel material to fabricate a memtransistor for synaptic plasticity simulation. Benefitting from the multi-terminal input and high adjustability, the memtransistor can mimic both homosynaptic and heterosynaptic plasticity without introducing an extra terminal and can simultaneously offer versatile reconfigurability of excitatory and inhibitory plasticity.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Conducting polymers and applications · Advanced Sensor and Energy Harvesting Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China

College of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. China

Shenzhen Key Laboratory of Flexible Memory Materials and Devices Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China

References

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