journal article·2024-06

Optimization of Process Parameters for Silicon Casting Manufacturing Using Fully Transient 3D Modeling Approach

Amir Reza Ansari Dezfoli

Silicon· Volume 16· Issue 8
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Aluminum Alloy Microstructure Properties · Solidification and crystal growth phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (26)

Show source-provided references
1. Mitamura K et al (2020) Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation. J Appl Phys 128(12):12510310.1063/5.0017823 ↗
2. Lee GH, Rhee CK, Lim KS (2006) A study on the fabrication of polycrystalline Si wafer by direct casting for solar cell substrate. Solar Energy 80(2):220–22510.1016/j.solener.2005.04.024 ↗
3. Helmreich D (1980) Current aspects of silicon casting. in Proc. Symp. on Electronic and Optical Properties of Polycrystalline or Impure Semiconductors. Electrochemical Society Princeton, NJ
4. Chen L, Dai B (2012) Optimization of power consumption on silicon directional solidification system by using numerical simulations. J Cryst Growth 354(1):86–9210.1016/j.jcrysgro.2012.06.010 ↗
5. Rao S et al (2020) Numerical and experimental investigation of sectional heater for improving multi-crystalline silicon ingot quality for solar cells. J Crystal Growth 537:12560610.1016/j.jcrysgro.2020.125606 ↗
6. Wu B et al (2008) Bulk multicrystalline silicon growth for photovoltaic (PV) application. J Crystal Growth 310(7–9):2178–218410.1016/j.jcrysgro.2007.11.194 ↗
7. Linke D et al (2014) Characterization of a 75 kg multicrystalline Si ingot grown in a KRISTMAG®-type G2-sized directional solidification furnace. Solar Energy Mat Solar Cells 130:652–66010.1016/j.solmat.2014.04.028 ↗
8. Gan C et al (2016) Natural sedimentation of insoluble particles during directional solidification of upgraded metallurgical-grade silicon. J Crystal Growth 439:74–7910.1016/j.jcrysgro.2016.01.001 ↗
9. Yuan J et al (2023) The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process. in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE10.1109/EDTM55494.2023.10103031 ↗
10. He L et al (2021) Numerical and experimental investigation of octagonal thermal field for improving multi-crystalline silicon ingot quality. Vacuum 185:11000710.1016/j.vacuum.2020.110007 ↗
11. Lau Jr V, Chiang P-t, Lan C-w (2021) In situ visualization of silicon wafer casting on silicon carbide as low nucleation undercooling substrate. J Crystal Growth. 566. 12614210.1016/j.jcrysgro.2021.126142 ↗
12. Wu B, et al (2009) Simulation of silicon casting process for photovoltaic (PV) application. in Proceedings of the 2009 TMS Annual Meeting & Exhibition
13. Fujiwara K et al (2006) Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting. Acta Materialia 54(12):3191–319710.1016/j.actamat.2006.03.014 ↗
14. Su W et al (2022) Design and numerical optimization of gas guidance system in casting silicon furnace by the orthogonal experiment. Silicon 14(1):301–30710.1007/s12633-021-01192-3 ↗
15. Nagarajan SG et al (2019) Influence of additional insulation block on multi-crystalline silicon ingot growth process for PV applications. J Crystal Growth 516:10–1610.1016/j.jcrysgro.2019.03.017 ↗
16. Kesavan V, Srinivasan M, Ramasamy P (2019) The influence of multiple-heaters on the reduction of impurities in mc-Si for directional solidification. Silicon 11:1335–134410.1007/s12633-018-9928-7 ↗
17. Srinivasan M et al (2016) Numerical modelling on stress and dislocation generation in multi-crystalline silicon during directional solidification for PV applications. Electron Mat Lett 12:431–43810.1007/s13391-016-4002-3 ↗
18. Sugunraj S et al (2023) Influence of helium gas flow under the retort bottom to control the impurities in grown mc-Si ingot by DS process for photovoltaic application: Numerical simulation. J Crystal Growth 609:12715110.1016/j.jcrysgro.2023.127151 ↗
19. Keerthivasan T et al (2022) Influence of radiation heat transfer on Mc-Si ingot during directional solidification: a numerical investigation. Silicon 14(18):12085–1209410.1007/s12633-022-01912-3 ↗
20. Keerthivasan T et al (2023) The impact on mc-Si ingot grown in a directional solidification furnace by partially replacing the susceptor bottom with an insulation material: A numerical investigation. J Crystal Growth 607:12713010.1016/j.jcrysgro.2023.127130 ↗
21. Gurusamy A et al (2023) Numerical investigation on modified bottom heater of DS furnace to improve mc-Si Ingot. Silicon 1-1210.1007/s12633-022-02259-5 ↗
22. Dezfoli ARA (2022) Design and optimization of complex single heater for Vertical Gradient Freeze (VGF) Grower. J Crystal Growth 12705110.1016/j.jcrysgro.2022.127051 ↗
23. Tseng I-H et al (2021) Effect of thermal stress on anisotropic grain growth in nano-twinned and un-twinned copper films. Acta Materialia 206:11663710.1016/j.actamat.2021.116637 ↗
24. Dezfoli ARA (2023) Czochralski (CZ) process modification with cooling tube in the response to market Global silicon shortage. J Crystal Growth 610:12717010.1016/j.jcrysgro.2023.127170 ↗
25. Dezfoli ARA et al (2017) 3D numerical study of coupled crystallization and carbon segregation during multi-crystalline silicon ingot solidification. Mat Sci Semiconduct Proc 59:76–8610.1016/j.mssp.2016.11.043 ↗
26. Dezfoli ARA et al (2016) Modeling of poly-crystalline silicon ingot crystallization during casting and theoretical suggestion for ingot quality improvement. Mat Sci Semiconduct Proc 53:36–4610.1016/j.mssp.2016.05.013 ↗