The Effect of Annealing Temperature on the Structural and Optical Properties of Si/SiO2 Composites Synthesized by Thermal Oxidation of Silicon Wafers
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Abstract
Abstract In this article, silicon wafers were thermal treated in air at temperatures from 800 to 1200°C. The annealed samples were investigated using X-ray diffraction, FTIR and optical reflection spectroscopy. Unique result obtained includes that, that Kubelk-Munk curves could be utilized to estimate the ratio of oxidized silicon atoms. In addition, we found that these curves could provide information on the degree to which the nanoparticle formation affects both the reflection spectra and the energy gap of the Si/SiO2 composites. On the other hand, it has been found that, the intensity of the silicon peak in XRD spectra is proportional to the relative absorption coefficient of amorphous silicon oxide.
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Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies · Semiconductor materials and devices
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