Improved Switching Current Ratio with Workfuncion Modulated Junctionless FinFET
Source abstract
Abstract
This work presents a new junctionless device called Workfunction Modulated Dual Metal Gate Junctionless FinFET (WFMDMG-Junctionless FinFET) to minimize the short channel effects, and to achieve improved dc performance. The result is analyzed by dividing the workfunction of the gate metal electrode in two equal halves and further dividing the source end of the electrode in five equal parts with linear variation in workfunction, keeping the drain end at constant workfunction. The 3-D TCAD simulations are carried out by SILVACO TCAD tool. And the results are compared with the Single Metal Gate (SMG)-junctionless FinFET, and Dual Metal Gate (DMG)-junctionless FinFET. The new proposed junctionless device shows improved subthreshold characteristics, i.e., minimum subthreshold swing (SS) of 60.1 mV/decade, and high ION/IOFF current ratio of 1.48e13.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis
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References (37)
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