The Effect of Oxidation Temperature on the (1000–1300) cm−1 Band in FT-IR Spectra of Silicon Oxide Synthesized by Thermal Oxidation of Silicon Wafers
Source abstract
Abstract
Abstract In this work, silicon wafers were thermal treated in air at temperatures varied in the range 800–1200°C. The annealed samples were investigated using FTIR, X-ray diffraction, FTIR and optical reflection spectroscopy. The effect of annealing temperature on the (1000–1300) cm− 1 band in FT-IR spectra of the prepared samples was investigated. The results showed that thermal oxidation at temperatures less than 1200°C leads to enhance the phenomenon of the splitting of longitudinal optical and transverse optical stretching motions. This phenomenon was verified by observing the appearance of two overlapping peaks in the region (1000–1300) cm− 1 in FT-IR spectra. The results also showed that the splitting process leads to the formation of defects in the crystal structure of silicon, which in turn leads to the formation of silicon nanoparticles.
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OpenAlex topics: Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies
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