Impact of Circular Layout on Characteristics in LSAMBM APD Based on SOI Film
Source abstract
Abstract
Lateral separate absorption multi-buffer multiplication avalanche photodiode (LSAMBM APD) with rectangular layout based on SOI film had been investigated as a promising candidate in the high-speed weak-light detection application. In this article, the layout-dependent characteristics of LSAMBM APD were investigated furthermore. Comparing to rectangular layout, the circular layout could shorten the length and improve electric field intensity of absorption region under the same sensitive area. In this way, carriers’ drift velocity could be accelerated, and the photon-generated carriers would be more effectively separated to achieve high responsivity and fast frequency response in LSAMBM APD with circular layout. When the illumination wavelength was 400 nm and input optical power was 0.001 W/cm2, the circular layout could enhance LSAMBM APD to achieve high responsivity and fast frequency response under the reverse bias voltage of 8.11 V and 9.2 V, and reach to 1236.9A/W and 3.2GHz, respectively. All results revealed that the LSAMBM APD with circular layout was more appropriate to high-speed single photon detection systems.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Optical Sensing Technologies · Integrated Circuits and Semiconductor Failure Analysis · Advanced Fluorescence Microscopy Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (21)
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1. Lalucaa V, Martin-Gonthier P, Magnan P (2015) Comparison of the 2D and 3D integrated circuit fabrication process for visible imaging SPAD arrays. 2015 IEEE Photonics Conference (IPC), Reston, VA, USA, pp. 442–443. https://doi.org/10.1109/IPCon.2015.732358610.1109/IPCon.2015.7323586 ↗
2. Bergeron M, Thibaudeau C, Cadorette J, Tetrault MA, Pepin CM, Clerk-Lamalice J, Loignon-Houle F, Davies M, Dautet H, Deschamps P, Fontaine R, Lecomte R (2015) LabPET II, an APD-based detector module with PET and counting CT imaging capabilities. IEEE Trans Nucl Sci 62(3):756–765. https://doi.org/10.1109/TNS.2015.242079610.1109/TNS.2015.2420796 ↗
3. Villa F, Lussana R, Bronzi D, Tisa S, Tosi A, Zappa F, Mora AD, Contini D, Durini D, Weyers S, Brockherde W (2014) CMOS imager with 1024 SPADs and TDCs for single-photon timing and 3-D time-of-flight. IEEE Journal of Selected Topics in Quantum Electronics 20(6):364–373. Art no 3804810, https://doi.org/10.1109/JSTQE.2014.234219710.1109/JSTQE.2014.2342197 ↗
4. Beer M, Hosticka BJ, Schrey OM, Brockherde W, Kokozinski R (2017) Range accuracy of SPAD-based time-of-flight sensors. 2017 European Conference on Circuit Theory and Design (ECCTD), Catania, Italy, pp 1–4. https://doi.org/10.1109/ECCTD.2017.809330610.1109/ECCTD.2017.8093306 ↗
5. Bretz T, Anderhub H, Backes M, Biland A, Boccone V, Braun I, Buß J, Cadoux F, Commichau V, Djambazov L, Dorner D, Einecke S, Eisenacher D, Gendotti A, Grimm O, von Gunten H, Haller C, Hempfling C, Hildebrand D, Horisberger U, Huber B, Kim K-S, Knoetig ML, Köhne J-H, Krähenbühl T, Krumm B, Lee M, Lorenz E, Lustermann W, Lyard E, Mannheim K, Meharga M, Meier K, Müller S, Montaruli T, Neise D, Nessi-Tedaldi F, Overkemping A-K, Paravac A, Pauss F, Renker D, Rhode W, Ribordy M, Röser U, Stucki J-P, Schneider J, Steinbring T, Temme F, Thaele J, Tobler S, Viertel G, Vogler P, Walter R, Warda K, Weitzel Q, Zänglein M (2013) FACT—the G-APD revolution in Cherenkov astronomy. 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference (2013 NSS/MIC), Seoul, Korea (South), pp 1–8. https://doi.org/10.1109/NSSMIC.2013.682959010.1109/NSSMIC.2013.6829590 ↗
6. Huang WK, Liu YC, Hsin YM (2008) Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers. Electron Lett 44(4):52–53. https://doi.org/10.1049/el:2008248410.1049/el:20082484 ↗
7. Kang HS, Lee MJ, Choi WY (2007) Si avalanche photodetectors fabricated in standard complementary metal-oxide-semiconductor process. Appl Phys Lett 90(15):63. https://doi.org/10.1063/1.272202810.1063/1.2722028 ↗
8. Bashkany ZA, Abbas IK, Mahdi MA, Al-Taay HF, Jennings P (2018) A self-powered heterojunction photodetector based on a PBS nanostructure grown on porous silicon substrate. Silicon 10(2):403–411. https://doi.org/10.1007/s12633-016-9462-410.1007/s12633-016-9462-4 ↗
9. Cova S, Ghioni M, Zappa F, Tosi A, Rech I, Gulinatti A, Tisa S (2010) Single-photon avalanche detectors for quantum communications. Optical Fiber Communication, IEEE:1–3. https://doi.org/10.1364/OFC.2010.OTuC210.1364/OFC.2010.OTuC2 ↗
10. Sullivan W, Beck J, Scritchfield R, Skokan M, Mitra P, Sun XL, Abshire J, Carpenter D, Lane B (2015) Linear-mode HgCdTe avalanche photodiodes for photon-counting applications. J Electron Mater 44(9):3092–3101. https://doi.org/10.1007/s11664-015-3824-310.1007/s11664-015-3824-3 ↗
11. Zhang ZH, Sun LJ, Chen M, Qiu XJ, Li B, Jiang H (2020) Separate absorption and multiplication AlGaN solar-blind avalanche photodiodes with high-low-doped and heterostructured charge layer. J Electron Mater 49(4):2343–2348. https://doi.org/10.1007/s11664-020-07950-010.1007/s11664-020-07950-0 ↗
12. Wen K, Zhao Y, Gao J, Zhang S, Tu J (2015) Design of a coherent receiver based on InAs Electron avalanche photodiode for free-space optical communications. IEEE Transactions on Electron Devices 62(6):1932–1938. https://doi.org/10.1109/TED.2015.242189510.1109/TED.2015.2421895 ↗
13. Sammak A, Aminian M, Nanver LK, Charbon E (2016) CMOS-compatible PureGaB Ge-on-Si APD pixel arrays. IEEE Transactions on Electron Devices 63(1):92–99. https://doi.org/10.1109/TED.2015.245724110.1109/TED.2015.2457241 ↗
14. Vignetti MM, Calmon F, Lesieur P, Savoy-Navarro A (2017) Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology. Solid State Electron 128:163–171. https://doi.org/10.1016/j.sse.2016.10.01410.1016/j.sse.2016.10.014 ↗
15. Iiyama K, Takamatsu H, Maruyama T (2010) Hole-injection-type and electron-injection-type silicon avalanche photodiodes fabricated by standard 0.18μm CMOS process. IEEE hotonics Technology Letters 22(12):932–934. https://doi.org/10.1109/LPT.2010.204738910.1109/LPT.2010.2047389 ↗
16. Tseng C, Chen K, Chen W, Lee MM, Na N (2014) A high-speed and low-breakdown-voltage silicon avalanche photodetector. IEEE Photon Technol Lett 26(6):591–594. https://doi.org/10.1109/LPT.2014.230085310.1109/LPT.2014.2300853 ↗
17. Xie H, Peng Y, Li J, Wu L (2019) Lateral separate absorption multibuffer multiplication avalanche photodiode based on SOI film. IEEE Trans Electron Devices 66(7):3003–3006. https://doi.org/10.1109/TED.2019.291533610.1109/TED.2019.2915336 ↗
18. Habib MHU, McFarlane N (2017) Breakdown and optical response of CMOS perimeter gated single-photon avalanche diodes. Electron Lett 53(19):1323–1325. https://doi.org/10.1049/el.2017.248510.1049/el.2017.2485 ↗
19. Cheong JS, Hayat MM, Zhou X, David JPR (2015) Relating the experimental ionization coefficients in semiconductors to the nonlocal ionization coefficients. IEEE Trans Electron Devices 62(6):1946–1952. https://doi.org/10.1109/TED.2015.242278910.1109/TED.2015.2422789 ↗
20. Nichetti C, Pilotto A, Palestri P, Selmi L, Antonelli M, Arfelli F, Biasiol G, Cautero G, Driussi F, Klein NY, Menk RH, Steinhartova T (2018) An improved nonlocal history-dependent model for gain and noise in avalanche photodiodes based on energy balance equation. IEEE Trans Electron Devices 65(5):1823–1829. https://doi.org/10.1109/TED.2018.281750910.1109/TED.2018.2817509 ↗
21. Zhang M, Wang KL, Jiang H, Hong R, Wu Z (2016) High performance silicon carbide avalanche-p-i-n ultraviolet photodiode with dual operation models. Electron Lett 52(17):1474–1476. https://doi.org/10.1049/EL.2016.202510.1049/EL.2016.2025 ↗