Lead Selenide Thin Films Designed for Laser Sensing and Visible Light Communications
Source abstract
Abstract
Herein thin films of PbSe are coated onto amorphous glass, amorphous silicon (a?Si) and crystalline n?type Si (n?Si) wafers by the thermal evaporation technique under a vacuum pressure of 10? 5 mbar. The films are structurally, morphologically, compositionally, optically and electrically characterized. Strong effect of the nature (amorphous or crystalline) and type (Si or glass) of the substrate on the physical properties of lead selenide films is detected. Of these properties the crystallite sizes decreased and the microstrain, the stacking faults and defect density increased and the energy band gap is blue shifted when (a, n)-Si substrates replaces glass. In addition, the use of crystalline n?Si substrates instead of a?Si removed the free carrier absorption from a?Si/ p?PbSe improving the quantum efficiency of the devices. Opto-electronically, n?Si/p?PbSe films showed photosensor characteristics that suit both visible light and infrared technology applications. The photosensors displayed high current responsivity, external quantum efficiency percentages and response times reaching respective values of 1.4 A/W, 172% and 60 ?s. In addition, the n?Si/p?PbSe photosensors which were used as detectors to receive wireless light signals generated from light pulses of 10 kHz frequencies showed smart features nominating them as promising devices for laser sensing and visible light communication technology.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
Show source-provided references
1. Moparthi S, Tiwari PK, Saramekala GK (2022) Sensitivity analysis of silicon nanotube FET (Si NTFET) with TCAD assisted machine learning. Silicon 14:9021–9031. https://doi.org/10.1007/s12633-021-01546-x10.1007/s12633-021-01546-x ↗
2. Chen P, Wu Z, Shi Y, Li C, Wang J, Yang J, Dong X, Gou J, Wang J, Jiang Y (2021) High-performance silicon-based PbSe-CQDs infrared photodetector. J Mater Sci Mater Electron 32:9452–9462. https://doi.org/10.1007/s10854-021-05609-y10.1007/s10854-021-05609-y ↗
3. Korotcenkov G(2023) Handbook of II-VI semiconductor-based sensors and radiation detectors: volume 1, materials and technology. Springer nature; Apr 2010.1007/978-3-031-19531-0 ↗
4. Sun J, Zhang Y, Fan Y, Tang X, Tan G (2022) Strategies for boosting thermoelectric performance of PbSe: a review. Chem Eng J 431:133699. https://doi.org/10.1016/j.cej.2021.13369910.1016/j.cej.2021.133699 ↗
5. Ren Y, Wei M, Wang S, Liu X (2022) Van der Waals growth of PbSe thin films on graphene and Bi2Se3. Vacuum 201:111043. https://doi.org/10.1016/j.vacuum.2022.11104310.1016/j.vacuum.2022.111043 ↗
6. Gupta MC, Harrison JT, Islam MT (2021) Photoconductive PbSe thin films for infrared imaging. Mater Adv 2(10):3133–316010.1039/D0MA00965B ↗
7. Grigoryeva S, Baklanov A, Alimkhanova A, Dmitriev A, Györök G (2021) Usage of light-emitting diode lighting and visible light communication Technology for Temperature Control. Acta Polytechnica Hungarica 18(4):7–24. https://doi.org/10.12700/APH.18.4.2021.4.110.12700/APH.18.4.2021.4.1 ↗
8. Alkhamisi MM, Qasrawi AF, Khanfar HK, Algarni SE (2023) Pt/PbSe optoelectronic receivers designed for 6G and terahertz communication technologies. Opt Quant Electron 55:156. https://doi.org/10.1007/s11082-022-04434-910.1007/s11082-022-04434-9 ↗
9. Fu H, Luan W, Tu ST (2012) A simple route for synthesis of PbSe nanocrystals: shape control by ligand and reaction time. Dalton Trans 39:12254–12258. https://doi.org/10.1039/C2DT30962A10.1039/C2DT30962A ↗
10. Hemeda OM, Said MZ, Barakat MM (2001) Spectral and transport phenomena in Ni ferrite-substituted Gd2O3. J Magn Magn Mater 224:132–142. https://doi.org/10.1016/S0304-8853(00)00578-310.1016/S0304-8853(00)00578-3 ↗
11. Liu K, Cui X, Xing Z, Li J, Zhang X, Dong M, Jin G, Wang H, Xu B (2023) Mechanism of LaFeO3 perovskite and gradient strain nanocrystalline improving carbon atom diffusion and tribological properties of carburizing steel. Tribol Int 177:107961. https://doi.org/10.1016/j.triboint.2022.10796110.1016/j.triboint.2022.107961 ↗
12. Boztug C, Sánchez-Pérez JR, Cavallo F, Lagally MG, Paiella R (2014) Strained-germanium nanostructures for infrared photonics. ACS Nano 8(4):3136–3151. https://doi.org/10.1021/nn404739b10.1021/nn404739b ↗
13. Almotiri RA, Qasrawi AF (2022) Optoelectronic performance of n− Si/p− MgSe heterojunctions as a visible light communication component. Optik 271:170106. https://doi.org/10.1016/j.ijleo.2022.17010610.1016/j.ijleo.2022.170106 ↗
14. Khusayfan, Najla M, Hazem K Khanfar, Seham R Alharbi (2021) "Design and characterization of au/CdSe/GeO 2/C MOSFET devices." Mater Res 24. https://doi.org/10.1590/1980-5373-MR-2021-002010.1590/1980-5373-MR-2021-0020 ↗
15. Ren Y, Li Y, Liu X (2021) Fabrication of topological insulator Bi2Se3− PbSe heterojunction photodetector for infrared detection. physica status solidi (RRL)–Rapid Research Letters 15(11):210040610.1002/pssr.202100406 ↗
16. Hebling J, Hoffmann MC, Hwang HY, Yeh KL, Nelson KA. (2008) Nonlinear optical effects in germanium in the THz range: THz-pump-THz-probe measurement of carrier dynamics. InUltrafast Phenomena XVI: Proceedings of the 16th International Conference, Palazzo dei Congressi Stresa, Italy, June 9--1 2009 (pp. 660–662). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-95946-5_21410.1007/978-3-540-95946-5_214 ↗
17. Buryakov A, Khusyainov D, Mishina E, Yachmenev A, Khabibullin R, Ponomarev D (2019) Effect of epitaxial stresses on the time dynamics of Photoexcited charge carriers in InGaAs− based Superlattices. MRS Adv 4:15–20. https://doi.org/10.1557/adv.2019.16310.1557/adv.2019.163 ↗
18. Qasrawi AF, Yaseen NM (2022) Performance of broken gap MoO 3/ZnS heterojunctions as abrupt electronic switches, MOSFETs, negative capacitance FETs and bandpass filters suitable for 3G/4G technologies. J Electron Mater Jan 9:1–3. https://doi.org/10.1007/s11664-021-09353-110.1007/s11664-021-09353-1 ↗
19. Jesenovec J, Varley J, Karcher SE, McCloy JS (2021) Electronic and optical properties of Zn-doped β-Ga2O3 Czochralski single crystals. J Appl Phys 129:225702. https://doi.org/10.1063/5.005046810.1063/5.0050468 ↗
20. Preble SF, Xu Q, Lipson M (2007) Changing the colour of light in a silicon resonator. Nat Photon 1:293–296. https://doi.org/10.1038/nphoton.2007.7210.1038/nphoton.2007.72 ↗
21. Wang X, Li K, Dong Y, Jiang K (2010) Preparation and characterization of monodispersed PbSe nanocubes. Crystal Res Technol J Experiment Indust Crystallograph 45:94–98. https://doi.org/10.1002/crat.20090050110.1002/crat.200900501 ↗
22. Klepzig LF, Biesterfeld L, Romain M, Niebur A, Schlosser A, Hübner J, Lauth J (2022) Colloidal 2D PbSe nanoplatelets with efficient emission reaching the telecom O. E-and S-band Nanoscale Adv 4:590–599. https://doi.org/10.1039/D1NA00704A10.1039/D1NA00704A ↗
23. Li B, Wang J, Wu Q, Tian Q, Li P, Zhang L, Yin LJ, Tian Y, Johnny Wong PK, Qin Z, Zhang L (2022) Nanopore-patterned CuSe drives the realization of the PbSe–CuSe lateral Heterostructure. ACS Appl Mater Interfaces 14:32738–32746. https://doi.org/10.1021/acsami.2c0839710.1021/acsami.2c08397 ↗
24. Feng W, Zhou H, Chen F (2015) Impact of thickness on crystal structure and optical properties for thermally evaporated PbSe thin films. Vacuum 114:82–8510.1016/j.vacuum.2015.01.007 ↗
25. Arivazhagan V, Manonmani Parvathi M, Rajesh S (2012) Impact of thickness on vacuum deposited PbSe thin films. Vacuum 86(8):1092–109610.1016/j.vacuum.2011.10.008 ↗
26. Rehman A, Delgado-Notario JA, Sai P, But DB, Prystawko P, Ivonyak Y, Cywinski G, Knap W, Rumyantsev S (2022) Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors. Appl Phys Lett 121:213503. https://doi.org/10.1063/5.012950710.1063/5.0129507 ↗
27. Dawar AL, Taneja OP, Paradkar SK, Kumar P, Mathur PC (1982) Electrical effects of thallium on the hall mobility in p-PbTe thin films. Thin Solid Films 91:357–362. https://doi.org/10.1016/0040-6090(82)90259-010.1016/0040-6090(82)90259-0 ↗
28. Chen X, Zang J, Yang X, Zhang Y, Chen Y, Zhao Y, Dong L, Shan CX (2022) Ultrasensitive monolayer-MoS2 heterojunction photodetectors realized via an asymmetric Fabry-Perot cavity. Sci China Mater 65:1861–1868. https://doi.org/10.1007/s40843-021-1955-010.1007/s40843-021-1955-0 ↗
29. Isah M, Rahman KS, Doroody C, Harif MN, Rosly HN, Sopian K, Tiong SK, Amin N (2021) Design optimization of CdTe/Si tandem solar cell using different transparent conducting oxides as interconnecting layers. J Alloys Compd 870:159351. https://doi.org/10.1016/j.jallcom.2021.15935110.1016/j.jallcom.2021.159351 ↗
30. Sze SM, Li Y, Ng KK (2021) Physics of semiconductor devices. John Wiley & Sons, Inc., Hoboken, New Jersey
31. Kang CH, Liu G, Lee C, Alkhazragi O, Wagstaff JM, Li KH, Alhawaj F, Ng TK, Speck JS, Nakamura S, DenBaars SP (2019) Semipolar InGaN/GaN micro-photodetector for gigabit-per-second visible light communication. Appl Phys Express 13:014001. https://doi.org/10.7567/1882-0786/ab58eb10.7567/1882-0786/ab58eb ↗
32. Alagarasan D, Varadharajaperumal S, Aadhavan R, Shanmugavelu B, Naik R, Kh S, Haunsbhavi K, Shkir M, Massoud EE, Ganesan R (2023) Enhanced photodetection performance of silver-doped tin sulfide photodetectors for visible light photodetection. Sensors Actuators A Phys 349:114065. https://doi.org/10.1016/j.sna.2022.11406510.1016/j.sna.2022.114065 ↗