Fabrication and Characterization of a p-AgO/PSi/n-Si Heterojunction for Solar Cell Applications
Source abstract
Abstract
A p-AgO/PSi/n-Si heterojunction was deposited by high vacuum thermal evaporation of silver subjected to thermal oxidation at 300 ∘C on porous silicon. Surface morphology and electrical properties of this structure have been studied. The X-ray diffraction (XRD) analysis reveals that the peaks at the (220) and (111) planes were dominated for the crystal quality of the AgO films. The band gap of the AgO films was found to be 2.2 eV and 3.2 eV . The positive sign of Hall effect confirms that the film was of p-type conductivity. The average grain size of pore was measured from the atomic force microscope (AFM) analysis and found to be around 32 nm. The responsivity photodetector after deposited AgO have revealed increasing in response.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Semiconductor materials and interfaces · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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