Controllable Nitrogen Doping in Multicrystalline Silicon by Casting Under Low Cost Ambient Nitrogen
Source abstract
Abstract
We have utilized cheaper ambient nitrogen for casting multicrystalline silicon ingots. Ambient nitrogen serves as the N doping source, it causes Si3N4 inclusions and related cracks when the doping amount is too high, while N doping can be effectively controlled by tuning the pressure of ambient nitrogen. The maximum value of the N concentration is measured up to 9.4 × 1015/cm3 by SIMS. The increase of nitrogen concentrations can reduce wafer breakage rate by significantly improving the fracture strength of wafers. The influence of N-O complexes in N-doped MC-Si on electric properties is also discussed. Solar cell efficiencies of N-doped wafers are almost comparable to those from ingots grown under ambient argon.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Silicon and Solar Cell Technologies · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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