Dielectric Properties of Au/SrTiO3/p-Si Structure Obtained by RF Magnetron Sputtering in a Wide Frequency Range
Source abstract
Abstract
Dielectric properties of Au/p–Si structure with Strontium titanate (SrTiO3) interlayer were examined in the frequency range of 100–900 kHz (by step 100 kHz). SrTiO3 thin film was deposited on p-type Si substrate using radio frequency (RF) magnetron sputtering method at a substrate temperature of 500 °C. Dielectric parameters such as dielectric constant (e′), dielectric loss (e′′), real modulus (M′), imaginary modulus (M′′), and electrical conductivity (σac) of the Au/SrTiO3/p-Si structure were calculated by evaluating the results obtained from admittance spectroscopy in the frequency range of 100–900 kHz by step 100 kHz. According to the obtained results, e′ values take negative values as a result of depending on frequency measurements.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Ferroelectric and Piezoelectric Materials
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