The Effect of a Porous Layer on I-V Characterization of a Polysilicon p-n Junction
Source abstract
Abstract
In this study, we investigate the effect of an etching process on the rectification property of a p-n junction. To achieve this goal, electrochemical etching (ECE) was employed, using a HF based solution. The morphological properties of the porous samples were characterized by Field Emission Scanning Electron Microscopy (FESEM). The images showed distributed pores in the range of several nanometers. Also, the distribution showed improvement in the size of meso- to macropores. The Current-Voltage measurement of porous and pristine poly silicon p-n junctions was done in dark and illumination conditions. I-V properties in illumination revealed intensive rectification in the proposed junction. Under dark condition, the ideality factor of the porous poly silicon p-n junction was approximately 3.9, which compared to 4.2 for the pristine sample demonstrates 7% improvement. Also, the light sensitivity was increased in the porous one. Furthermore, the light response (Δφ BP) of the porous sample gave the value of 0.02. In conclusion, the rectification mode could be enhanced through relevant porosity.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
Show source-provided references
1. (2012) Porous Silicon in Practice: Preparation, Characterization and Applications, 1st Edition, Wiley-VCH Verlag GmbH & Co. KGaA
2. Pérez EX (2007) Design, fabrication and characterisation of porous silicon multilayer optical devices, University of ROVIRA
3. Osorio E, Urteaga R, Acquaroli LN, Garcia-Salgado G, Juare H, Koropecki RR (2011) Sol Energy Mater and Sol Cells 95:3069–307310.1016/j.solmat.2011.06.036 ↗
4. Northen TR, Woo H-K, Northen MT, Nordström A, Uritboonthail W, Turner KL, Siuzdak G (2007) J Am Soc Mass Spectrom 18:1945–194910.1016/j.jasms.2007.08.009 ↗
5. Aroutiounian VM, Ghulinyan MZh (2003) Phys Status Solidi (a) 197:462–46610.1002/pssa.200306545 ↗
6. del Río JA, Tagüeña-martínez J (1993) Solid State Commun 87:541–54510.1016/0038-1098(93)90592-B ↗
7. Foll H, Christophersen M, Carstensen J, Hasse G (2002) Mater Sci Eng R 39:93–14110.1016/S0927-796X(02)00090-6 ↗
8. Naderi N, Hashim MR (2012) Appl Surf Sci 258:6436–644010.1016/j.apsusc.2012.03.056 ↗
9. Zhang J (2009) Nonlinear and linear optical phenomena in silicon nanostructures: physics and applications, ProQuest
10. Teherani JT (2010) Band-to-band tunneling in silicon diodes and tunnel transistors, University of MIT
11. Hamakawa Y (2004) Thin film solar cells. Springer, Berlin10.1007/978-3-662-10549-8 ↗
12. Rajabi M, Dariani RS (2009) J Porous Mater 16:513–51910.1007/s10934-008-9226-7 ↗
13. Vitanov P, Delibasheva M, Goranova E, Peneva M (2000) Sol Energy Mater Sol Cells 61:213–22110.1016/S0927-0248(99)00110-5 ↗
14. Vitanov P, Kamenova M, Tyutyundzhiev N, Gantcheva V (1995) Proceeding of Solar World Congress Harare
15. Adamin ZN, Hakhoyan AP, Aroutiounian VM, Bar- seghian RS, Touryan K (2000) Sol Energy Mater Sol Cells 64:347–35110.1016/S0927-0248(00)00221-X ↗
16. Drabczyk K, Panek P, Lipinski M (2003) Sol Energy Mater Sol Cells 76:545–55110.1016/S0927-0248(02)00265-9 ↗
17. Kore L, Bosman G (1999) Sol Energy Mater Sol Cells 57:31–4810.1016/S0927-0248(98)00164-0 ↗
18. Berger MG, Dieker C, Thonissen M, Vescan L, Luth H, Münder H, et al. (1994) J Phys D Appl Phys 27:133310.1088/0022-3727/27/6/035 ↗
19. Pavesi L, Mulloni V (1999) Js Lumin 80:43–5210.1016/S0022-2313(98)00069-6 ↗
20. Arenas MC, Vega M, Martínez O, Salinas OH Nanocrystalline porous silicon: Structural, optical, electrical and photovoltaic properties
21. Shi H, Zheng Y, Wang Y, Yuan R (1993) Appl Phys Lett 63:770–77210.1063/1.109903 ↗
22. Xia B, Miao Q, Chao J, Xiao SJ, Wang HT, Xiao ZD (2008) Chin Chem Lett 19:199–20210.1016/j.cclet.2007.12.003 ↗
23. Bazrafkan I, Dariani R (2009) Phys B Condens Matter 404:1638–164210.1016/j.physb.2009.01.040 ↗
24. Fan J, Wan M, Zhu D (1998) Synth Met 95:119–12410.1016/S0379-6779(98)00043-5 ↗
25. Vitanov P, Delibasheva M, Goranova E, Peneva M (2000) Sol Energy Mater Sol Cells 61:213–22110.1016/S0927-0248(99)00110-5 ↗
26. Kim J (2007) J Korean Phys Soc 50:116810.3938/jkps.50.1168 ↗
27. Wu K-H, Tang C-C (2014) Int J Photogr, Article ID 307643
28. Joubert P, Abouliatim A, Guyader P, Briand D, Lambert B, Guendouz M (1995) Thin Solid Films 255:96–9810.1016/0040-6090(94)05629-R ↗
29. Bourenane K, Keffous A, Nezzal G, Bourenane A, Boukennous Y, Boukezzata A (2008) Sensors Actuators B Chem 129:612– 62010.1016/j.snb.2007.09.039 ↗
30. Rhoderick EH (1988) Metal–semiconductor contacts, 2nd edn. Clarendon, Oxford
31. Shan HQ (2007) Chin Phis Let 24:825–82710.1088/0256-307X/24/3/066 ↗
32. Pattabi M, Krishnan S, Ganesh X, Mathew X (2007) Sol Energy 81:111–11610.1016/j.solener.2006.06.004 ↗
33. Razi F, Iraji zad A, Rahimi F (2010) Sensors Actuators B 146:53–6010.1016/j.snb.2010.01.047 ↗
34. Naderi N, Hashim MR (2012) Int J Electrochem Sci 7:11512–1151810.1016/S1452-3981(23)16962-8 ↗