Effects of Heat Extraction Methods on the Quality of High Performance Multi-Crystalline Silicon Ingot
Source abstract
Abstract
We manufactured two high performance multi-crystalline silicon ingots and investigated the effects of heat extraction methods on the quality of silicon ingots. The results show that the two heat extraction methods caused different supercooling and solid-liquid interface shape during the process of crystal growth, and further effected the qualities of silicon ingots and the performance of solar cells. Due to the increase of supercooling, the method of overall fast heat extraction (the temperature of TC2 and TC3 decreased by more than 120 °C within 30 min) could obtain smaller grains, more grain boundaries and less dislocations than those of the method of fast heat extraction in the center and slow heat extraction on both sides of the ingot. Meanwhile, a slightly convex solid-liquid interface was obtained, which reduced the growth stress of grains and the formation probability of dislocations. In addition, the resistivity distribution would be more uniform in different regions of silicon ingot, which is beneficial to improving the performance of solar cells.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
Show source-provided references
1. Yuan S, Hu D, Yu X, He L, Lei Q, Chen H, Zhang X, Xu Y, Yang D (2018) Multicrystalline silicon crystal assisted by silicon flakes as seeds. Sol Energy Mater Sol Cells 174:202–20510.1016/j.solmat.2017.09.004 ↗
2. Zhu D, Ming L, Huang M, Zhang Z, Huang X (2014) Seed-assisted growth of high quality multi-crystalline silicon in directional solidification. J Cryst Growth 386:52–5610.1016/j.jcrysgro.2013.09.051 ↗
3. Yang YM, Yu A, Hsu B, Hsu WC, Yang A, Lan CW (2015) Development of high performance multi-crystalline silicon for photovoltaic industry. Prog Photovolt: Res Appl 23:340–35110.1002/pip.2437 ↗
4. He L, Lei Q, Rao S, Mao W, Luo H, Xu Y, Zhou C, Li J, Ding J, Cheng X (2021) Numerical and experimental investigation of octagonal thermal field for improving multi-crystalline silicon ingot quality. Vacuum 185:11000710.1016/j.vacuum.2020.110007 ↗
5. Rao S, Chen XH, Zhang F, He L, Luo Y, Xiong H, Hu Y, Wang F (2020) B. Song, Influence of modified bottom insulation on the seeded directional solidification process for high-performance multi-crystalline silicon. Vacuum 172:10896910.1016/j.vacuum.2019.108969 ↗
6. Zhang H, You D, Huang C, Wu Y, Xu Y, Wu P (2016) Growth of multicrystalline silicon ingot with both enhanced quality and yield through quartz seeded method. J Cryst Growth 435:91–9710.1016/j.jcrysgro.2015.11.020 ↗
7. Aravindan G, Srinivasan M, Aravinth K, Ramasamy P (2019) Numerical study on effect of side insulation movement in the multi-crystalline silicon growth process. Silicon 11:1327–133310.1007/s12633-018-9927-8 ↗
8. Hu C, Chen JC, Nguyen THT, Hou ZZ, Chen CH, Huang YH, Yang M (2018) Optimization of heat transfer during the directional solidification process of 1600 kg silicon feedstock. J Cryst Growth 484:70–7710.1016/j.jcrysgro.2017.12.042 ↗
9. Rao S, He L, Zhang F, Lei Q, Luo Y, Xiong H, Hu Y, Huang X, Song B (2020) Numerical and experimental investigation of sectional heater for improving multi-crystalline silicon ingot quality for solar cells. J Cryst Growth 537:12560610.1016/j.jcrysgro.2020.125606 ↗
10. Nagarajan SG, Srinivasan M, Aravinth K, Ramasamy P (2018) Influence of additional heat exchanger block on directional solidification system for growing multi-crystalline silicon ingot - A simulation investigation. AIP Conf. Proc. 1942 140061:1–410.1063/1.5029192 ↗
11. Lan CW, Lan A, Yang CF, Hsu HP, Yang M, Yu A, Hsu B, Hsu WC, Yang A (2017) The emergence of high-performance multi-crystalline silicon in photovoltaics. J Cryst Growth 468:17–2310.1016/j.jcrysgro.2016.10.072 ↗
12. Stokkan G, Hu Y, Mjøs Ø, Juel M (2014) Study of evolution of dislocation clusters in high performance multicrystalline silicon. Sol Energy Mater Sol Cells 130:679–68510.1016/j.solmat.2014.02.034 ↗
13. Hurle DTJ (1995) A mechanism for twin formation during Czochralski and encapsulated vertical Bridgman growth of III–V compound semiconductors. J Cryst Growth 147:239–25010.1016/0022-0248(94)00666-0 ↗
14. Tsoutsouva MG, Riberi–Béridot T, Regula G, Reinhart G, Baruchel J, Guittonneau F, Barrallier L, Mangelinck-Noël N (2016) In situ investigation of the structural defect generation and evolution during the directional solidification of <110> seeded growth Si. Acta Mater 115:210–22310.1016/j.actamat.2016.06.004 ↗
15. Tandjaoui A, Mangelinck-Noel N, Reinhart G, Billia B, Guichard X (2013) Twinning occurrence and grain competition in multi-crystalline silicon during solidification. CR Phys 14:141–14810.1016/j.crhy.2012.12.001 ↗
16. Duffar T, Nadri A (2010) On the twinning occurrence in bulk semiconductor crystal growth. Scripta Mater 62:955–96010.1016/j.scriptamat.2010.02.034 ↗
17. Carl E, Danilewsky A, Meissner E, Geiger T (2014) Large- and small-angle grain boundaries in multi-crystalline silicon and implications for the evolution of grain boundaries during crystal growth. J Appl Cryst 47:1958–196510.1107/S1600576714023061 ↗
18. Kutsukake K, Usami N, Ohno Y, Tokumoto Y, Yonenaga I (2013) Control of grain boundary propagation in mono-like Si: Utilization of functional grain boundaries. Appl Phys Express 6:02550510.7567/APEX.6.025505 ↗
19. Liu L, Yu Q, Qi X, Zhao W, Zhong G (2015) Controlling solidification front shape and thermal stress in growing quasi-single-crystal silicon ingots: Process design for seeded directional solidification. Appl Therm Eng 91:225–23310.1016/j.applthermaleng.2015.08.023 ↗
20. Sturm F, Tremp M, Schwanke S, Schuck K, Kranert C, Reimann C, Friedrich J (2020) Solid state diffusion of metallic impurities from crucible and coating materials into crystalline silicon ingots for PV application. J Cryst Growth 540:12563610.1016/j.jcrysgro.2020.125636 ↗
21. Zhang H, Hu D, Zhong D, Huang C, Yuan S, You D, Zhang X, Wan Y (2020) The effect of diffusion barrier on minority carrier lifetime improvement of seed assisted cast silicon ingot. J Cryst Growth 541:12568410.1016/j.jcrysgro.2020.125684 ↗
22. Li X, Gao Z, Zhang D, Tao K, Jia R, Jiang S, Wang B, Ji Z, Jin Z, Liu X (2020) High-efficiency multi-crystalline black silicon solar cells achieved by additive assisted Ag-MACE. Sol Energy 195:176–18410.1016/j.solener.2019.11.045 ↗
23. Xu Y, Shen H, Yang Z, Wei Q, Ni Z, Li S, Wang Z, Zhao B (2020) Enhanced open-circuit voltage in p-type passivated emitter and rear cell by doped polysilicon layer as passivation contact. Sol Energy 207:436–44010.1016/j.solener.2020.07.002 ↗
24. Zhang Z, Yuan S, Yu X, Zhu X, Yang D (2020) Influence of temperature gradient at interface on defect multiplication in seed-assisted multicrystalline silicon. Sol Energy Mater Sol Cells 211:11052010.1016/j.solmat.2020.110520 ↗