A Hybrid Photodiode for Solar Tracking Systems
Source abstract
Abstract
In this work, ruthenium doped ZnO based Al/ZnO:Ru/p-Si/Al diodes were fabricated to explain photoresponse behavior of metal oxide based Schototky diodes. The particle size of the doped zinc oxide film about 168–362 nm with surface roughness 27.735 nm were measured respectively. The electrical properties of the Al/ZnO:Ru/p-Si/Al diode were measured using current voltage (I-V) and capacitance voltage (C-V) techniques. The electronic parameters of the diode were found to change with solar illuminations. The photo switching-off-on behaviour of the diode was analyzed by photoresponse characteristics. The photoresponse parameters of Al/ZnO:Ru/p-Si/Al are changed with Ru content. Finally, some perspectives for future investigation metal oxide based Schottky diodes are discussed as well. The ZnO based Schottky diodes can be used as photosensor in solar tracking and optic communication applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Thin-Film Transistor Technologies · Nanowire Synthesis and Applications
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References (39)
Show source-provided references
1. Aoki Y (2017) Photovoltaic performance of Organic Photovoltaics for indoor energy harvester. Org Electron Physics Mater Appl 48:194–197. https://doi.org/10.1016/j.orgel.2017.05.02310.1016/j.orgel.2017.05.023 ↗
2. Gozeh BA, Karabulut A, Yildiz A, Yakuphanoglu F (2018) Solar light responsive ZnO nanoparticles adjusted using cd and La co-dopant photodetector. J Alloys Compd 732:16–24. https://doi.org/10.1016/j.jallcom.2017.10.16710.1016/j.jallcom.2017.10.167 ↗
3. Al-Hazmi FE, Yakuphanoglu F (2018) Photoconducting and photovoltaic properties of ZnO:TiO2 composite/p-silicon Heterojunction photodiode. Silicon. 10:781–787. https://doi.org/10.1007/s12633-016-9530-910.1007/s12633-016-9530-9 ↗
4. Karabulut A, Orak İ, Türüt A (2018) The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes. Solid State Electron 144:39–48. https://doi.org/10.1016/j.sse.2018.02.01610.1016/j.sse.2018.02.016 ↗
5. Huang H, Zhao Q, Hong K, Xu Q, Huang X (2014) Optical and electrical properties of N-doped ZnO heterojunction photodiode. Phys E Low-Dimensional Syst Nanostructures 57:113–117. https://doi.org/10.1016/j.physe.2013.10.03810.1016/j.physe.2013.10.038 ↗
6. Song K, Koo CY, Jun T, Lee D, Jeong Y, Moon J (2011). J Cryst Growth 326:23–2710.1016/j.jcrysgro.2011.01.044 ↗
7. Yakuphanoglu F (2010). J Alloys Compd 507:184–18910.1016/j.jallcom.2010.07.151 ↗
8. Aslan MS, Ozdal T, Kavak K (2019) Production and characterization of ZnO / Cu2O based devices growing with spin coating method. J Mater Electron Device 1(1):37–40
9. Farag AAM, Farooq WA, Yakuphanoglu F (2011). Microelectron Eng 88:2894–289910.1016/j.mee.2011.03.016 ↗
10. Aksoy S, Ruzgar S (2019) Effect of Nitrogen on optical properties of ZnO film deposited by sol gel method. J Mater Electron Device 1(1):29–33
11. Orak I, Kocyigit A, Turut A (2017) The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique. J Alloys Compd 691:873–879. https://doi.org/10.1016/j.jallcom.2016.08.29510.1016/j.jallcom.2016.08.295 ↗
12. Ameen S, Park DR, Shaheer Akhtar M, Shin HS (2016) Lotus-leaf like ZnO nanostructures based electrode for the fabrication of ethyl acetate chemical sensor. Mater Lett 164:562–566. https://doi.org/10.1016/j.matlet.2015.11.05510.1016/j.matlet.2015.11.055 ↗
13. Dragonetti C, Valore A, Colombo A, Magni M, Mussini P, Roberto D, Ugo R, Valsecchi A, Trifiletti V, Manfredi N, Abbotto A (2013) Ruthenium oxyquinolate complexes for dye-sensitized solar cells. Inorganica Chim Acta 405:98–104. https://doi.org/10.1016/j.ica.2013.05.00610.1016/j.ica.2013.05.006 ↗
14. Ajimsha RS, Vanaja KA, Jayaraj MK, Misra P, Dixit VK, Kukreja LM (2007) Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition. Thin Solid Films 515(18):7352–7356. https://doi.org/10.1016/j.tsf.2007.03.00210.1016/j.tsf.2007.03.002 ↗
15. Günnaz S, Özdemir N, Dayan S, Dayan O, Çetinkaya B (2011) Synthesis of ruthenium(II) complexes containing tridentate triamine (′ŇŇN′) and bidentate diamine ligands (ŇN′): as catalysts for transfer hydrogenation of ketones. Organometallics. 30:4165–4173. https://doi.org/10.1021/om200470p10.1021/om200470p ↗
16. Boujnah M, Boumdyan M, Naji S, Benyoussef A, El Kenz A, Loulidi M (2016) High efficiency of transmittance and electrical conductivity of V doped ZnO used in solar cells applications. J Alloys Compd 671:560–565. https://doi.org/10.1016/j.jallcom.2016.02.10710.1016/j.jallcom.2016.02.107 ↗
17. Karabulut A, Dere A, Dayan O, Al-Sehemi AG, Serbetci Z, Al-Ghamdi AA, Yakuphanoglu F (2019) Silicon based photodetector with Ru (II) complexes organic interlayer. Mater Sci Semicond Process 91:422–430. https://doi.org/10.1016/j.mssp.2018.11.03510.1016/j.mssp.2018.11.035 ↗
18. Karataş Ş, El-Nasser HM, Al-Ghamdi AA, Yakuphanoglu F (2018) High Photoresponsivity Ru-doped ZnO/p-Si Heterojunction diodes by the sol-gel method. Silicon. 10:651–658. https://doi.org/10.1007/s12633-016-9508-710.1007/s12633-016-9508-7 ↗
19. Farooq WA, Elgazzar E, Dere A, Dayan O, Serbetci Z, Karabulut A, Atif M, Hanif A (2019) Photoelectrical characteristics of novel Ru (II) complexes based photodiode. J Mater Sci Mater Electron 30(6):5516–5525. https://doi.org/10.1007/s10854-019-00845-910.1007/s10854-019-00845-9 ↗
20. Soylu M, Orak I, Dayan O, Serbetci Z (2015) A novel photodiode based on ruthenium(II) complex containing polydentate pyridine as photocatalyst. Microelectron Reliab 55:2685–2688. https://doi.org/10.1016/j.microrel.2015.08.00410.1016/j.microrel.2015.08.004 ↗
21. Tataroglu A, Ocaya R, Dere A, Dayan O, Serbetci Z, Al-Sehemi AG, Soylu M, Al-Ghamdi AA, Yakuphanoglu F (2018) Ruthenium(II) complex based photodiode for organic electronic applications. J Electron Mater 47:828–833. https://doi.org/10.1007/s11664-017-5882-110.1007/s11664-017-5882-1 ↗
22. Tataroğlu A (2019) Analysis of the current-voltage (I-V) characteristics of MIS device as a function of gamma irradiation. J Mater Electron Device 1(1):6–10
23. Ilhan M (2019) Electrical characterization of Al/fluorescein sodium salt organic semiconductor/au diode by current-voltage and capacitance-voltage methods. Journal of Materials and Electronic Devices 1(1):11–16
24. Forrest SR (1997) Ultrathin organic films grown by organic molecular beam deposition and related techniques. Chem Rev 2665:1793–189610.1021/cr941014o ↗
25. Altındal S (2019) On the origin of increase in the barrier height and decrease in ideality factor with increase temperature in Ag/SiO2/p-Si (MIS) Schottky barrier diodes (SBDs). J Mater Electron Device 1(1):38–43
26. Al Orainy RH, Hendi AA (2014) Fabrication and electrical characterization of CdO/p-Si photosensors. Microelectron Eng 127:14–20. https://doi.org/10.1016/j.mee.2014.02.01410.1016/j.mee.2014.02.014 ↗
27. Çiçek O, Tecimer HU, Tan SO, Tecimer H, Altindal IU (2016) Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions. Compos Part B Eng 98:260–268. https://doi.org/10.1016/j.compositesb.2016.05.04210.1016/j.compositesb.2016.05.042 ↗
28. Card HC, Rhoderick EH (1971) Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes Journal of Physics D: Applied Physics 4(10):1589
29. Sevgili Ö, Lafzi F, Karabulut A, Orak İ, Bayındır S (2019) The synthesis of new bola-amphiphile TPEs and the comparison of current transformer mechanism and structural properties for Al/Bis (HCTA)-TPE/p-Si and Al/Bis (HCOA)-TPE/p-Si heterojunctions. Compos Part B 172:226–23310.1016/j.compositesb.2019.05.020 ↗
30. Çetin H, Ayyildiz E (2007) The electrical properties of metal-oxide-semiconductor devices fabricated on the chemically etched n-InP substrate. Appl Surf Sci 253:5961–596610.1016/j.apsusc.2006.12.110 ↗
31. Karabulut A, Dere A, Al-Sehemi AG, Al-Ghamdi AA, Yakuphanoglu F (2018) Cadmium Oxide: Titanium Dioxide Composite Based Photosensitive Diode. J Electron Mater 47(12):7159–716910.1007/s11664-018-6647-1 ↗
32. Touhami R, Ravelet S, Yagoub MCE, Baudrand H (2003) Influence of oxygen plasma on electrical and physical parameters of au–oxide–n-InP structures. J Appl Phys 94:6574–657810.1063/1.1615305 ↗
33. Nicollian EH, Brews JR (1982) MOS physics and technology. Wiley, New York
34. Sharma M, Tripathi SK (2016) Frequency and voltage dependence of admittance characteristics of Al/Al2O3/PVA: n-ZnSe Schottky barrier diodes. Mater Sci Semicond Process 41:155–16110.1016/j.mssp.2015.07.028 ↗
35. Altındal S, Uslu H (2011) The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of au/PVA/n-Si structures. J Appl Phys 109:07450310.1063/1.3554479 ↗
36. Reddy VR, Umapathi A, Rao LD (2013) Effect of annealing on the electronic parameters of au/poly (ethylmethacrylate)/n-InP Schottky diode with organic interlayer. Curr Appl Phys 13:1604–161010.1016/j.cap.2013.06.001 ↗
37. Al-Sehemi AG, Mensah-Darkwa K, Al-Ghamdi AA, Soylu M, Gupta RK, Yakuphanoglu F (2017) Composite CuFe1− xSnxO2/p-type silicon photodiodes. Spect Acta Part A 180:110–11810.1016/j.saa.2017.03.004 ↗
38. Çetinkaya HG, Sevgili Ö, Altındal Ş (2019) The fabrication of Al/p-Si (MS) type photodiode with (% 2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics. Phys B Condens Matter 560:91–9610.1016/j.physb.2019.02.038 ↗
39. Wageh S, Karabulut A, Dere A, Al-Sehemi AG, Al-Ghamdi AA, El-Tantawy F, Yakuphanoglu F (2018) Photodiode based on Pb 0.9 Cd 0.1 S ternary alloy semiconductor for solar tracking systems. J Mater Sci Mater Electron 29(19):16880–1689310.1007/s10854-018-9783-8 ↗