Infrared and Thermoelectric Properties of BixTey-Based Alloyed Thin Films

We studied the infrared (IR) and thermoelectric properties of (Bi x Te y +Cd) and (Bi x Te y +InSb) alloyed thin films prepared on SiO 2 glass substrates by electron beam evaporation (EB). Cd was used in terms of the enhancement of sensitivity to IR radiation because CdTe is known to be highly sensitive to IR radiation. The voltage sensitivities were 0.71 and 43.9 mV for Bi 2 Te 2.4 and Bi 2 Cd 2.6 Te 5.5 , respectively, at a bias current of 10 mA and a blackbody furnace temperature of 1000C. The maximum values of the power factor (P f ) were 1.1510 -3 W/mK 2 at 450 K for Bi 2 Te 2.4 , 2.4610 -4 W/mK 2 at 550 K for Bi 2 Te 3.6 +InSb 6 , and 8.9010 -6 W/mK 2 at 550 K for InSb 2.2 .