Orientation dependent variation in antimony segregation coefficient near the silicon (111) plane: An explanation using lateral microscopic growth LμG concepts
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OpenAlex topics: Force Microscopy Techniques and Applications · Surface and Thin Film Phenomena · Semiconductor materials and interfaces
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References (9)
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1. Hall · Phys. Rev. · 1952 · 88 · 13910.1103/PhysRev.88.139 ↗
2. Burton · J. Chem. Phys. · 1953 · 21 · 11
3. Bradshaw · J. Crystal Growth · 1980 · 48 · 51410.1016/0022-0248(80)90264-X ↗
4. Zulehner · 1982 · Vol. 8
5. Bauser · Appl. Phys. Letters · 1980 · 37 · 100110.1063/1.91762 ↗
6. Bauser · J. Electrochem. Soc. · 1982 · 129 · 178210.1149/1.2124293 ↗
7. Trainor · Solid State Electron. · 1961 · 2 · 10610.1016/0038-1101(61)90027-2 ↗
8. Cochran · Proc. Cambridge Phil. Soc. · 1934 · 30 · 36510.1017/S0305004100012561 ↗
9. American Society for Testing and Materials, 1916 Race Street, Philadelphia, PA 19103, USA.