The formation of ordered structures in InGaN layers
Source abstract
Abstract
We investigated atomic ordering in InxGa1−xN layers for x between 0.03 and 0.28 using transmission electron microscopy. We demonstrate that {1 0 −1 1} facets play a role in 1:1 ordering. Deviations in composition from x = 0.5 are accommodated by the formation of small ordered regions embedded in a short-range ordered or disordered matrix.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies · Semiconductor materials and devices
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References (12)
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1. Zunger · 1994 · vol. 3 · 1410
2. Behbehani · Appl. Phys. Lett. · 1999 · 75 · 220210.1063/1.124964 ↗
3. Doppalapudi · J. Appl. Phys. · 1998 · 84 · 138910.1063/1.368251 ↗
4. Westmeyer · Appl. Phys. Lett. · 2001 · 79 · 271010.1063/1.1411984 ↗
5. Rao · Appl. Phys. Lett. · 2004 · 85 · 196110.1063/1.1791327 ↗
6. Northrup · Appl. Phys. Lett. · 1999 · 74 · 231910.1063/1.123837 ↗
7. Lorenz · Appl. Phys. Lett. · 2000 · 77 · 339110.1063/1.1328091 ↗
8. Narayanan · Philos. Mag. A · 2002 · 82 · 88510.1080/01418610208240008 ↗
9. Liliental-Weber · Phys. Rev. Lett. · 1997 · 79 · 283510.1103/PhysRevLett.79.2835 ↗
10. K. Bajaj, M. Rao and S. Mahajan, unpublished results, 2006.
11. Swaminathan · J. Appl. Phys. · 1975 · 46 · 371610.1063/1.322173 ↗
12. Glazer · Phys. Rev. B · 2004 · 70 · 18412310.1103/PhysRevB.70.184123 ↗