Electromigration effect on solder bump in Cu/Sn–3Ag–0.5Cu/Cu system
Source abstract
Abstract
The electromigration effect on solder bump and interfacial reactions in the Cu/Sn–3Ag–0.5Cu/Cu flip chip joint was investigated at 453 K with 10 kA/cm2. Cu was transported towards the anode and avoid nucleated at the highest current density point near the cathode. The void nucleated at the Sn/Cu6Sn5 interface and grew along the cathode side. It was observed that the unique solder bump deformation towards the cathode started in the early stage of the electromigration test.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (21)
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