Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy
Source abstract
Abstract
A double-layer InAs/GaAs(00 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Semiconductor materials and devices
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References (30)
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