journal article·2011Open access

Iterative regularity and parent-offspring growth mold of stable grain array in bismuth silicate micro-crystals

Z.G. Zhang, X.F. Wang, Q.Q. Tian

Science of Sintering· Volume 43· Issue 1

Abstract

Bismuth silicate micro-crystals with grain array structure were prepared by sintering method under atmosphere pressure. The samples were characterized for structural and surface morphological properties by X-ray diffraction (XRD) and Environmental scanning electron microscopy (ESEM). The result shows that stable grain arrays grow by iterative mode. If a stable grain array eliminates, a new stable grain array will generate. In a stable parent array, an offspring array may generate after the corresponding partial elimination of its parent array. If one part of an offspring array stops growing, it will be as a new parent array, and then its offspring grain array will create. The sum of the lengths of an offspring array and the corresponding eliminated part of its parent array is equal to the length of the next eliminated part of its parent array. It means the growth rate of an offspring array is equal to that of the corresponding survived part of its parent array. There is a highly correlation between grain array length and average grain line spacing. It means that larger average grain line spacing corresponds to the stable grain array with lager length. When average grain line spacing increases 1?m, the corresponding array length will increase approximately 7.6?m.
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Research context

OpenAlex topics: Solidification and crystal growth phenomena · nanoparticles nucleation surface interactions · Acoustic Wave Resonator Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics and Electronic Engineering, Xianyang Normal University, Xianyang, P.R. China + School of Material Science & Technology, Shanxi University of Science & Technology, Xi’an, P. R. China

School of Material Science & Technology, Shanxi University of Science & Technology, Xi’an, P.R. China

References (15)

Show source-provided references
1. 10.1023/B:INMA.0000008890.41755.9010.1023/B:INMA.0000008890.41755.90 ↗
2. 10.1016/S0960-8974(00)00003-610.1016/S0960-8974(00)00003-6 ↗
3. 10.1016/j.optmat.2007.05.04610.1016/j.optmat.2007.05.046 ↗
4. 10.1016/0022-0248(90)90240-L10.1016/0022-0248(90)90240-L ↗
5. 10.1016/0022-0248(89)90224-810.1016/0022-0248(89)90224-8 ↗
6. 10.1016/S0960-8974(00)00004-810.1016/S0960-8974(00)00004-8 ↗
7. 10.1016/0168-9002(95)01279-610.1016/0168-9002(95)01279-6 ↗
8. 10.1016/S0168-9002(97)00973-X10.1016/S0168-9002(97)00973-X ↗
9. 10.1016/S0925-3467(01)00220-810.1016/S0925-3467(01)00220-8 ↗
10. 10.1016/j.jcrysgro.2007.11.17710.1016/j.jcrysgro.2007.11.177 ↗
11. 10.1007/s10789-005-0317-410.1007/s10789-005-0317-4 ↗
12. 10.2298/SOS0901083Z10.2298/SOS0901083Z ↗
13. 10.2298/SOS1001051Z10.2298/SOS1001051Z ↗
14. 10.1016/0022-3697(95)00317-710.1016/0022-3697(95)00317-7 ↗
15. 10.1016/S0025-5408(03)00025-410.1016/S0025-5408(03)00025-4 ↗