Effect of p-well contact on n-well potential modulation in a 90 nm bulk technology
Source abstract
Abstract
The effect of p-well contact on the n-well potential modulation in a 90 nm bulk technology with P+ deep well is studied based on three-dimensional (3-D) TCAD device simulations. Simulation results illustrate that the p-well contact area has a great impact on the n-well potential modulation and the enhancement factor will level out as the p-well contact area increases, and that at the same time the increase of p-well doping concentration can also enhance the n-well potential modulation. However, the effect of p-well contact location on the n-well modulation is not obvious as the p-well contact distance increases. According to our simulation results, it is proposed that the p-well contact area should be cautiously designed to mitigate single event effect (SEE) in the P+ deep well technology.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Radiation Effects in Electronics · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
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