Significant tensile elasticity of nanoscale boron arsenide
Source abstract
Abstract
砷化硼(BAs)是一种具有超高热导率的半导体, 未来集成到功能 器件会不可避免地承受外部应力, 因此对BAs弹性和强度的研究非常 紧迫. 在这项工作中, 我们从BAs单晶中制备了长度为1–3 μm, 宽度为 100–300 nm的BAs纳米桥, 并沿着[100], [101]和[111]取向进行了原位 单轴拉伸试验. 试验结果表明, BAs单晶纳米桥的拉伸弹性具有明显的 取向依赖性, 其中[100]取向纳米桥的拉伸应变高达9%, 相应拉伸强度 高达34.8 GPa. 另外, 我们从理论上探讨了拉伸应变对BAs电子结构和 热输运的影响. 结果表明, 随着应变的增加, BAs的带隙会减小, 晶格热 导率显著降低. 其中, 若沿[111]方向发生12%的拉伸应变, BAs将由间接 带隙转变为直接带隙半导体; 而在相同应变量下, 沿[100]方向的拉伸应 变对BAs热导率的影响要显著低于[101]和[111]方向. 这些发现为BAs 的能带调控和热管理提供了重要的启示, 如在实际器件中可通过“应变 工程”实现BAs电和热的调控.
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Research context
OpenAlex topics: Nanowire Synthesis and Applications · Mechanical and Optical Resonators · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
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