Triple-layered nc-Si:H films improve electrical properties and expand process window of IBC-SHJ solar cells simulated by Silvaco TCAD
Source abstract
Abstract
叉指式背接触硅异质结(IBC-SHJ)太阳电池由于其优异的光学性能备受关注, 但是较低的填充因子(FF)限制了其转换效率. 本文中, 我们用Silvaco TCAD软件模拟了IBC-SHJ太阳电池, 发现p-n结和高低结收集载流子的能力有很大差异. 高低结内建电场较弱, 难以收集电子是FF较低的主要原因. 因此, 我们用氢化纳晶硅(nc-Si:H)薄膜来代替氢化非晶硅(a-Si:H)薄膜, 并且在nc-Si:H薄膜表面覆盖一层超薄高掺杂层进一步提高了载流子传输效率, 获得了高达85.3%的FF. 此外, 三层nc-Si:H薄膜还提高了工艺生产中对掺杂层厚度的容错性, 这大大扩展了IBCSHJ太阳电池的工艺窗口. 这项工作为解决IBC-SHJ太阳电池的电学问题提供了一条有效的途径, 对工艺生产中IBC-SHJ太阳电池的设计具有指导意义.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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