Deep-level defects and carrier manipulation in Sn-doped β-Ga2O3 (100) single crystals
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OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides
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References (34)
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1. Wang Z, Chen X, Ren FF, et al. Deep-level defects in gallium oxide. J Phys D-Appl Phys, 2020, 54: 04300210.1088/1361-6463/abbeb1 ↗
2. Huang Y, Xu X, Yang J, et al. Defect identification in β-Ga2O3 Schottky barrier diodes with electron radiation and annealing regulating. IEEE Trans Nucl Sci, 2024, 71: 1178–118510.1109/TNS.2024.3383441 ↗
3. Polyakov AY, Smirnov NB, Shchemerov IV, et al. Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage. Appl Phys Lett, 2018, 112: 03210710.1063/1.5012993 ↗
4. Gong H, Zhou F, Xu W, et al. 1.37 kV/12 A NiO/β-Ga2O3 heterojunction diode with nanosecond reverse recovery and rugged surge-current capability. IEEE Trans Power Electron, 2021, 36: 12213–1221710.1109/TPEL.2021.3082640 ↗
5. Gong HH, Chen XH, Xu Y, et al. A 1.86-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode. Appl Phys Lett, 2020, 117: 02210410.1063/5.0010052 ↗
6. Gong H, Zhou F, Yu X, et al. 70-(im-body Ga2O3 Schottky barrier diode With 1.48 K/W thermal resistance, 59 A surge current and 98.9% conversion efficiency. IEEE Electron Device Lett, 2022, 43: 773–77610.1109/LED.2022.3162393 ↗
7. Xia X, Li JS, Sharma R, et al. Radiation damage in the ultra-wide bandgap semiconductor Ga2O3. ECS J Solid State Sci Technol, 2022, 11: 09500110.1149/2162-8777/ac8bf7 ↗
8. Zhong A, Li J, Shan L, et al. Low CTE polyimide for advanced package application. In: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). Chengdu: IEEE, 2021. 1–3
9. Wang C, Yan Q, Zhang C, et al. β-Ga2O3 lateral Schottky barrier diodes with > 10 kV breakdown voltage and anode engineering. IEEE Electron Device Lett, 2023, 44: 1684–168710.1109/LED.2023.3309674 ↗
10. Ma Y, Zhou X, Tang W, et al. 702.3 A·cm−2/10.4 mΩ·cm2 β-Ga2O3 U-shape trench gate MOSFET with N-ion implantation. IEEE Electron Device Lett, 2023, 44: 384–38710.1109/LED.2023.3235777 ↗
11. Zhou X, Ma Y, Xu G, et al. Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing. Appl Phys Lett, 2022, 121: 22350110.1063/5.0130292 ↗
12. Lv Y, Liu H, Wang Y, et al. Oxygen annealing impact on β-Ga2O3 MOSFETs: improved pinch-off characteristic and output power density. Appl Phys Lett, 2020, 117: 13350310.1063/5.0021242 ↗
13. Islam MM, Liedke MO, Winarski D, et al. Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3. Sci Rep, 2020, 10: 613410.1038/s41598-020-62948-2 ↗
14. Galazka Z, Irmscher K, Uecker R, et al. On the bulk β-Ga2O3 single crystals grown by the Czochralski method. J Cryst Growth, 2014, 404: 184–19110.1016/j.jcrysgro.2014.07.021 ↗
15. Lin YH, Faber H, Labram JG, et al. High electron mobility thin-film transistors based on solution-processed semiconducting metal oxide heterojunctions and quasi-superlattices. Adv Sci, 2015, 2: 150005810.1002/advs.201500058 ↗
16. Papadogianni A, Rombach J, Berthold T, et al. Two-dimensional electron gas of the In2O3 surface: enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping. Phys Rev B, 2020, 102: 07530110.1103/PhysRevB.102.075301 ↗
17. Shin AR, Gu TH, Shin YJ, et al. Pre-melting-assisted impurity control of β-Ga2O3 single crystals in edge-defined film-fed growth. Nanomaterials, 2024, 15: 710.3390/nano15010007 ↗
18. Fu B, Jian G, Mu W, et al. Crystal growth and design of Sn-doped β-Ga2O3: morphology, defect and property studies of cylindrical crystal by EFG. J Alloys Compd, 2022, 896: 16283010.1016/j.jallcom.2021.162830 ↗
19. Zeng K, Jia Y, Singisetti U. Interface state density in atomic layer deposited SiO2/β-Ga2O3 (−201) MOSCAPs. IEEE Electron Device Lett, 2016, 37: 906–90910.1109/LED.2016.2570521 ↗
20. Look DC, Fang ZQ. Characterization of near-surface traps in semiconductors: GaN. Appl Phys Lett, 2001, 79: 84–8610.1063/1.1379982 ↗
21. Ma XH, Zhu JJ, Liao XY, et al. Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique. Appl Phys Lett, 2013, 103: 03351010.1063/1.4813912 ↗
22. Huang Y, Xu X, Yang J, et al. Library of intrinsic defects in β-Ga2O3:first-principles studies. Mater Today Commun, 2023, 35: 10589810.1016/j.mtcomm.2023.105898 ↗
23. Zhang Z, Farzana E, Arehart AR, et al. Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy. Appl Phys Lett, 2016, 108: 05210510.1063/1.4941429 ↗
24. Ingebrigtsen ME, Kuznetsov AY, Svensson BG, et al. Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3. APL Mater, 2019, 7: 02251010.1063/1.5054826 ↗
25. Ingebrigtsen ME, Varley JB, Kuznetsov AY, et al. Iron and intrinsic deep level states in Ga2O3. Appl Phys Lett, 2018, 112: 04210410.1063/1.5020134 ↗
26. Montes J, Kopas C, Chen H, et al. Deep level transient spectroscopy investigation of ultra-wide bandgap (−201) and (001) β-Ga2O3. J Appl Phys, 2020, 128: 20570110.1063/5.0021859 ↗
27. Swallow JEN, Varley JB, Jones LAH, et al. Transition from electron accumulation to depletion at β-Ga2O3 surfaces: the role of hydrogen and the charge neutrality level. APL Mater, 2019, 7: 02252810.1063/1.5054091 ↗
28. Johnson JM, Chen Z, Varley JB, et al. Unusual formation of point-defect complexes in the ultrawide-band-gap semiconductor β-Ga2O3. Phys Rev X, 2019, 9: 041027
29. Tadjer MJ, Freitas Jr. JA, Culbertson JC, et al. Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres. J Phys D-Appl Phys, 2020, 53: 50400210.1088/1361-6463/abb432 ↗
30. Wang Z, Yu X, Gong H, et al. Identification and suppression of majority surface states in the dry-etched β-Ga2O3. J Phys Chem Lett, 2022, 13: 7094–709910.1021/acs.jpclett.2c02167 ↗
31. Kim J, Ren F, Pearton SJ. Will surface effects dominate in quasi-two-dimensional gallium oxide for electronic and photonic devices? Nanoscale Horiz, 2019, 4: 1251–125510.1039/C9NH00273A ↗
32. Zimmermann C, Førdestrøm Verhoeven E, Kalmann Frodason Y, et al. Formation and control of the E2* center in implanted β-Ga2O3 by reverse-bias and zero-bias annealing. J Phys D-Appl Phys, 2020, 53: 46400110.1088/1361-6463/aba64d ↗
33. Lingaparthi R, Sasaki K, Thieu QT, et al. Surface related tunneling leakage in β-Ga2O3 (001) vertical Schottky barrier diodes. Appl Phys Express, 2019, 12: 07400810.7567/1882-0786/ab2824 ↗
34. Jesenovec J, Weber MH, Pansegrau C, et al. Gallium vacancy formation in oxygen annealed β-Ga2O3. J Appl Phys, 2021, 129: 24570110.1063/5.0053325 ↗